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IKW15T120 데이터시트(Datasheet) 4 Page - Infineon Technologies AG

부품명 IKW15T120
상세내용  LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMCON HE DIODE
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
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IKW15T120
^
TrenchStop Series
Power Semiconductors
4
Preliminary / Rev. 1 Jul-02
Switching Characteristic, Inductive Load,
at Tj=150 °C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
t d( o n)
-50
-
Rise time
t r
-35
-
Turn-off delay time
t d( of f)
-
600
-
Fall time
t f
-
120
-
ns
Turn-on energy
Eon
-2.0
-
Turn-off energy
Eoff
-2.1
-
Total switching energy
Ets
T j =150° C,
VCC =600V, IC =15A,
VGE =- 15 /15V,
R G = 5 6Ω
L σ
1) =180nH,
C σ
1) =39pF
Energy losses include
“tail” and diode
reverse recovery.
-4.1
-
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t rr
-
330
-
ns
Diode reverse recovery charge
Q rr
-3.4
-
µC
Diode peak reverse recovery current
I rr m
-21
-
A
Diode peak rate of fall of reverse
recovery current during tb
dirr /d t
T j =150° C
VR =600 V, IF =15A,
diF/dt =600A/ µs
-
190
-
A/
µs
1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.




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