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IKW15T120 데이터시트(Datasheet) 2 Page - Infineon Technologies AG

부품명 IKW15T120
상세내용  LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMCON HE DIODE
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
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IKW15T120
^
TrenchStop Series
Power Semiconductors
2
Preliminary / Rev. 1 Jul-02
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
R thJC
1.1
Diode thermal resistance,
junction – case
R thJC D
1.5
Thermal resistance,
junction – ambient
R thJA
TO-247AC
40
K/W
Electrical Characteristic,
at Tj = 25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V(BR)CES VGE =0V, IC =0.5m A
1200
-
-
Collector-emitter saturation voltage
VCE(sat )
VGE = 15 V, IC =15A
T j =2 5 °C
T j =125° C
T j =150° C
-
-
-
1.7
2.0
2.2
2.2
-
-
Diode forward voltage
VF
VGE =0V, IF =15A
T j =2 5 °C
T j =125° C
T j =150° C
-
-
-
1.7
1.7
1.7
2.2
-
-
Gate-emitter threshold voltage
VGE(th)
I C =0.6m A, VCE = VGE
5.0
5.8
6.5
V
Zero gate voltage collector current
I CE S
VCE =1200V,
VGE =0V
T j =2 5 °C
T j =150° C
-
-
-
-
0.2
2.0
mA
Gate-emitter leakage current
I GE S
VCE =0V, VGE =20V
-
-
100
nA
Transconductance
g fs
VCE =20V, IC =15A
-10
-
S
Integrated gate resistor
R Gint
none




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