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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STTH60L06TV 데이터시트(PDF) 4 Page - STMicroelectronics |
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STTH60L06TV 데이터시트(HTML) 4 Page - STMicroelectronics |
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4 / 6 page  STTH60L06TV 4/6 Figure 7: Reverse recovery softness factor versus dIF/dt (typical values, per diode) Figure 8: Relative variations of dynamic parameters versus junction temperature Figure 9: Transient peak forward voltage versus dIF/dt (typical values, per diode) Figure 10: Forward recovery time versus dIF/dt (typical values, per diode) Figure 11: Junction capacitance versus reverse voltage applied (typical values, per diode) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 50 100 150 200 250 300 350 400 450 500 S factor dI /dt(A/µs) F I< 2 x I T =125°C FF(AV) j V =400V R 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 IRM trr S factor T (°C) j I=I Reference: T =125°C FF(AV) j V =400V R QRR 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 350 400 450 500 V (V) FP dI /dt(A/µs) F I=I T =125°C FF(AV) j 0 50 100 150 200 250 300 350 400 450 0 100 200 300 400 500 t (ns) fr dI /dt(A/µs) F I=I T =125°C FF(AV) j V =1.1 x V max. FR F 10 100 1000 1 10 100 1000 C(pF) V (V) R F=1MHz V =30mV T =25°C OSC RMS j |
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