EMD03N06E datasheet(1/6 Pages) EXCELLIANCE

부품명	EMD03N06E

상세설명	N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

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제조업체	EXCELLIANCE [Excelliance MOS Corp.]

홈페이지	http://www.excelliancemos.com/

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2015/9/10

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EMD03N06E

G

D

S

N‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS

60V

RDSON (MAX.)

3.5mΩ

ID

180A

UIS, Rg 100% Tested

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

Gate‐Source Voltage

VGS

±30

V

Continuous Drain Current

TC = 25 °C

ID

180

A

TC = 100 °C

127

Pulsed Drain Current

1

IDM

540

Avalanche Current

IAS

90

Avalanche Energy

L = 0.1mH, ID=90A, RG=25Ω

EAS

405

mJ

Repetitive Avalanche Energy

2

L = 0.05mH

EAR

202

Power Dissipation

TC = 25 °C

PD

277

W

TC = 100 °C

111

Operating Junction & Storage Temperature Range

Tj, Tstg ‐55 to 150

°C

100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=60A, Rated VDS=60V N-CH

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNIT

Junction‐to‐Case

RJC

0.45

°C / W

Junction‐to‐Ambient

RJA

62.5

1Pulse width limited by maximum junction temperature.

2Duty cycle  1％

유사한 부품 번호 - EMD03N06E

제조업체	부품명	데이터시트	상세설명
Excelliance MOS Corp.	EMD03N06ES	236Kb / 7P	N?륝hannel Logic Level Enhancement Mode Field Effect Transistor
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EMD03N06E 데이터시트(PDF) 1 Page - Excelliance MOS Corp.

EMD03N06E 데이터시트(HTML) 1 Page - Excelliance MOS Corp.

유사한 부품 번호 - EMD03N06E

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