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STGD7NB60F 데이터시트(PDF) 2 Page - STMicroelectronics

부품명 STGD7NB60F
상세설명  N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGD7NB60F 데이터시트(HTML) 2 Page - STMicroelectronics

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STGP7NB60F - STGD7NB60F
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
SWITCHING ON
TO-220
DPAK
Rthj-case
Thermal Resistance Junction-case Max
1.56
1.78
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
100
°C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collectro-Emitter Breakdown
Voltage
IC = 250 µA, VGE = 0
600
V
ICES
Collector cut-off
(VGE =0)
VCE = Max Rating, TC =25 °C
10
µA
VCE = Max Rating, TC = 125 °C
100
µA
IGES
Gate-Emitter Leakage
Current (VCE =0)
VGE =±20V,VCE = 0
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGE(th)
Gate Threshold Voltage
VCE =VGE,IC = 250µA
35
V
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE =15V, IC =7 A
2
2.4
V
VGE =15V, IC= 7 A, Tj =125°C
1.5
V
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Cies
Input Capacitance
VCE =25V,f= 1MHz,VGE =0
540
pF
Coes
Output Capacitance
80
pF
Cres
Reverse Transfer
Capacitance
13
pF
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 480V, IC =7A,
VGE =15V
37
4
18
50
nC
nC
nC
ICL
Latching Current
Vclamp = 480 V
Tj = 125°C , RG =10 Ω
28
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VCC =480 V, IC =7 A
RG =10Ω ,VGE =15V
17
6
ns
ns
(di/dt)on
Eon
Turn-on Current Slope
Turn-on Switching Losses
VCC= 480 V, IC = 7ARG=10Ω
VGE = 15 V,Tj =125°C
900
60
A/µs
µJ


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