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AM29LV2562M 데이터시트(PDF) 63 Page - SPANSION

부품명 AM29LV2562M
상세설명  512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
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AM29LV2562M 데이터시트(HTML) 63 Page - SPANSION

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October 9, 2003
Am29LV2562M
61
P R E L I M I NARY
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. For 1–16 doublewords/1–32 words programmed.
4. Effective write buffer specification is based upon a 16-doubleword/32-word write buffer operation.
5. AC specifications listed are tested with V
IO = VCC. Contact AMD for information on AC operation when VIO ≠ VCC.
Parameter
120R
JEDEC
Std.
Description
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
45
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
µs
Effective Write Buffer Program
Operation (Notes 2, 4)
Per Word
Typ
7.5
µs
Per Doubleword
Typ
15
µs
Effective Accelerated Write Buffer
Program Operation (Notes 2, 4)
Per Word
Typ
6.25
µs
Per Doubleword
Typ
12.5
µs
Program Operation (Note 2)
Word
Typ
60
µs
Doubleword
Typ
60
µs
Accelerated Programming Operation
(Note 2)
Word
Typ
54
µs
Doubleword
Typ
54
µs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec


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