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GD9FU1G8F2AMG 데이터시트(PDF) 18 Page - GigaDevice Semiconductor (Beijing) Inc.

부품명 GD9FU1G8F2AMG
상세설명  Single level cell technology
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제조업체  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
홈페이지  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

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GD9Fx1GxF2A
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8. OPERATION DESCRIPTION
8.1 Page Read Operation
8.1.1 Common Page Read (00H-30H)
Read is initiated by writing 00H-30H to the command register along with four address cycles. After initial power up, 00h
command is latched, and the first page of the first block has been read to cache, ready for random read out. Therefore only
4 address cycles and 30H command initiates that operation after initial power up. The 2176 bytes of data within the selected
page are transferred to the data registers. The system controller can detect the completion of this data transfer (tR) by
analyzing the output of R/B# pin. Once the data in a page is loaded into the data registers, they may be read out in tRC by
sequentially pulsing RE#. The repetitive high to low transitions of the RE# clock make the device output the data starting
from the selected column address up to the last column address.
After the last data has been read out, CE# may be pulled up for some time to end the read operation, while during the RE#
toggle cycle, CE# may be don't care when RE# is high
. The CE# Don’t Care feature may simplify the system interface,
which allows controller to directly download the code from flash device, and the CE# transitions will not stop the read
operation during the latency time.
00h
Col. Add1
Col. Add2
Row Add1
Row Add2
30h
DOUT
N
DOUT
N+1
tCLS
tCLH
tCS
tCH
tCLR
tCLS
tCLH
tCS
tCH
tRC
tWB
tWC
tALS
tR
tCHZ
tCEA
tRR
tREA
Data out from
Col.Add.N
CLE
CE#
WE#
RE#
I/Ox
RY/BY#
ALE
tDS tDH
Col.Add .N
Figure 14: Common Page Read figures


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