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GD25B257D 데이터시트(PDF) 27 Page - GigaDevice Semiconductor (Beijing) Inc.

부품명 GD25B257D
상세설명  3.3V Uniform Sector Dual and Quad Serial Flash
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제조업체  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
홈페이지  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

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3.3V Uniform Sector
Dual and Quad Serial Flash
GD25B257D
27
8.8. Read Data Bytes (REAC 03H or 4READ 13H)
The Read Data Bytes (READ) command is followed by a 3-Byte address (A23-A0), and each bit being latched-in on
the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, and each bit being shifted out, at
a Max frequency fR, on the falling edge of SCLK. The first Byte addressed can be at any location. The address is
automatically incremented to the next higher address after each Byte of data is shifted out. The whole memory can, therefore,
be read with a single Read Data Bytes (READ) command. Any Read Data Bytes (READ) command, while an Erase,
Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress.
Figure 10. Read Data Bytes Sequence Diagram (ADS=0)
Figure 11. Read Data Bytes Sequence Diagram (ADS=1)
Figure 12. Read Data with 4-Byte Address Sequence Diagram (ADS=0 or ADS=1)
Command
0
1
2
3
4
5
6
7
13H
CS#
SCLK
SI
SO
High-Z
8
9 10
36 37 38 39 40
MSB
3
2
1
0
42 43 44 45
41
31 30 29
7
6
5
4
3
2
1
0
46 47
32-bit address
MSB
Data Out1
Data Out2
Command
0
1
2
3
4
5
6
7
03H
CS#
SCLK
SI
SO
High-Z
8
9 10
28 29 30 31 32
MSB
3
2
1
0
34 35 36 37
33
23 22 21
7
6
5
4
3
2
1
0
38 39
24-bit address
MSB
Data Out1
Data Out2
Command
0
1
2
3
4
5
6
7
03H
CS#
SCLK
SI
SO
High-Z
8
9 10
36 37 38 39 40
MSB
3
2
1
0
42 43 44 45
41
31 30 29
7
6
5
4
3
2
1
0
46 47
32-bit address
MSB
Data Out1
Data Out2


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