AM29LV652DU90RMAI datasheet(34/55 Pages) SPANSION

부품명	AM29LV652DU90RMAI

상세설명	128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO Control

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Am29LV652D

October 29, 2004

PRELI M INARY

RY/BY#: Ready/Busy#

The RY/BY# is a dedicated, open-drain output which

indicates whether an Embedded Algorithm is in

progress or complete. The RY/BY# status is valid after

the rising edge of the final WE# pulse in the command

sequence. Since RY/BY# is an open-drain output, sev-

eral RY/BY#s can be tied together in parallel with a

pull-up resistor to VCC.

If the output is low (Busy), the device is actively eras-

ing or programming. (This includes programming in

the Erase Suspend mode.) If the output is high

(Ready), the device is in the read mode, the standby

mode, or the device is in the erase-suspend-read

mode.

Table 11, on page 34 shows the outputs for RY/BY#.

DQ6: Toggle Bit I

Toggle Bit I on DQ6 indicates whether an Embedded

Program or Erase algorithm is in progress or com-

plete, or whether the device has entered the Erase

Suspend mode. Toggle Bit I may be read at any ad-

dress, and is valid after the rising edge of the final

WE# pulse in the command sequence (prior to the

program or erase operation), and during the sector

erase time-out.

During an Embedded Program or Erase algorithm op-

eration, successive read cycles to any address cause

DQ6 to toggle. The system may use either OE# or

CE# (or CE2#) to control the read cycles. When the

operation is complete, DQ6 stops toggling.

After an erase command sequence is written, if all sectors

selected for erasing are protected, DQ6 toggles for approxi-

mately 100 µs, then returns to reading array data. If not all

selected sectors are protected, the Embedded Erase algo-

rithm erases the unprotected sectors, and ignores the se-

lected sectors that are protected.

The system can use DQ6 and DQ2 together to determine

whether a sector is actively erasing or is erase-suspended.

When the device is actively erasing (that is, the Embedded

Erase algorithm is in progress), DQ6 toggles. When the de-

vice enters the Erase Suspend mode, DQ6 stops toggling.

However, the system must also use DQ2 to determine

which sectors are erasing or erase-suspended. Alterna-

tively, the system can use DQ7 (see the subsection on

“DQ7: Data# Polling” on page 31).

If a program address falls within a protected sector,

DQ6 toggles for approximately 1

µs after the program

command sequence is written, then returns to reading

array data.

DQ6 also toggles during the erase-suspend-program

mode, and stops toggling once the Embedded Pro-

gram algorithm is complete.

Table 11, on page 34 shows the outputs for Toggle Bit

I on DQ6. Figure 6 shows the toggle bit algorithm. Fig-

ure 19, on page 45 in the “AC Characteristics” section

shows the toggle bit timing diagrams. Figure 20, on

page 45 shows the differences between DQ2 and DQ6

in graphical form. See also the subsection “DQ2: Tog-

gle Bit II” on page 33.

Figure 6. Toggle Bit Algorithm

START

No

Yes

DQ5 = 1?

No

Yes

Toggle Bit

= Toggle?

No

Program/Erase

Operation Not

Complete, Write

Reset Command

Program/Erase

Operation Complete

Read DQ7–DQ0

Toggle Bit

= Toggle?

Read DQ7–DQ0

Twice

Read DQ7–DQ0

Note: The system should recheck the toggle bit even if

DQ5 = “1” because the toggle bit may stop toggling as DQ5

changes to “1.” See the subsections on DQ6 and DQ2 for

more information.

유사한 부품 번호 - AM29LV652DU90RMAI

제조업체	부품명	데이터시트	상세설명
Advanced Micro Devices	AM29LV652DU90RMAI	994Kb / 54P	128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO??Control

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유사한 설명 - AM29LV652DU90RMAI

제조업체	부품명	데이터시트	상세설명
Advanced Micro Devices	AM29LV652D	994Kb / 54P	128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO??Control
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