M30L0R8000B0 datasheet(68/83 Pages) STMICROELECTRONICS

부품명	M30L0R8000B0

상세설명	256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory

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제조업체	STMICROELECTRONICS [STMicroelectronics]

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M30L0R8000T0, M30L0R8000B0

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Note: 1. The variable P is a pointer which is defined at CFI offset 015h.

2. Bank Regions. There are two Bank Regions, see Tables 30, 31, 32, 33, 34 and 35 in APPENDIX A.

(P+3F)h = 149h

03h

(P+47)h = 151h

03h

Bank Region 2 (Erase Block Type 1):Page mode and

Synchronous mode capabilities (defined in Table 42.)

Bit 0: Page-mode reads permitted

Bit 1: Synchronous reads permitted

Bit 2: Synchronous writes permitted

Bits 3-7: reserved

(P+40)h = 14Ah

03h

Bank Region 2 Erase Block Type 2 Information

Bits 0-15: n+1 = number of identical-sized erase blocks in

each bank

Bits 16-31: n×256 = number of bytes in erase block region

(P+41)h = 14Bh

00h

(P+42)h = 14Ch

80h

(P+43)h = 14Dh

00h

(P+44)h =14Eh

64h

Bank Region 2 (Erase Block Type 2)

Minimum block erase cycles × 1000

(P+45)h = 14Fh

00h

(P+46)h = 150h

02h

Bank Region 2 (Erase Block Type 2): BIts per cell, internal

ECC

Bits 0-3: bits per cell in erase region

Bit 4: reserved for “internal ECC used”

BIts 5-7: reserved

(P+47)h = 151h

03h

Bank Region 2 (Erase Block Type 2): Page mode and

Synchronous mode capabilities (defined in Table 42.)

Bit 0: Page-mode reads permitted

Bit 1: Synchronous reads permitted

Bit 2: Synchronous writes permitted

Bits 3-7: reserved

(P+48)h = 152h

Feature Space definitions

(P+49)h = 153h

(P+43)h = 153h

Reserved

Flash memory (top)

Flash memory (bottom)

Description

Offset

Data

Offset

Data

유사한 부품 번호 - M30L0R8000B0

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	M30L0R7000B0	1Mb / 83P	128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
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	M30L0R7000B0ZAQE	1Mb / 83P	128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
	M30L0R7000B0ZAQF	1Mb / 83P	128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
	M30L0R7000B0ZAQT	1Mb / 83P	128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory

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M30L0R8000B0 데이터시트(PDF) 68 Page - STMicroelectronics

M30L0R8000B0 데이터시트(HTML) 68 Page - STMicroelectronics

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