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M30L0R8000B0ZAQ 데이터시트(Datasheet) 64 Page - STMicroelectronics

부품명 M30L0R8000B0ZAQ
상세내용  256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
PDF  83 Pages
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제조사  STMICROELECTRONICS [STMicroelectronics]
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M30L0R8000T0, M30L0R8000B0
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Table 41. Protection Register Information
Offset
Data
Description
Value
(P+E)h = 118h
0002h
Number of protection register fields in JEDEC ID space. 0000h indicates
that 256 fields are available.
2
(P+F)h = 119h
0080h
Protection Field 1: Protection Description
Bits 0-7 Lower byte of protection register address
Bits 8-15 Upper byte of protection register address
Bits 16-23 2n bytes in factory pre-programmed region
Bits 24-31 2n bytes in user programmable region
80h
(P+10)h = 11Ah
0000h
00h
(P+ 11)h = 11Bh
0003h
8 Bytes
(P+12)h = 11Ch
0003h
8 Bytes
(P+13)h = 11Dh
0089h
Protection Register 2: Protection Description
Bits 0-31 protection register address
Bits 32-39 n number of factory programmed regions (lower byte)
Bits 40-47 n number of factory programmed regions (upper byte)
Bits 48-55 2n bytes in factory programmable region
Bits 56-63 n number of user programmable regions (lower byte)
Bits 64-71 n number of user programmable regions (upper byte)
Bits 72-79 2n bytes in user programmable region
89h
(P+14)h = 11Eh
0000h
00h
(P+15)h = 11Fh
0000h
00h
(P+16)h = 120h
0000h
00h
(P+17)h = 121h
0000h
0
(P+18)h = 122h
0000h
0
(P+19)h = 123h
0000h
0
(P+1A)h = 124h
0010h
16
(P+1B)h = 125h
0000h
0
(P+1C)h = 126h
0004h
16




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