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M30L0R8000T0ZAQE 데이터시트(PDF) 61 Page - STMicroelectronics |
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61 / 83 page 61/83 M30L0R8000T0, M30L0R8000B0 Table 38. CFI Query System Interface Information Offset Data Description Value 01Bh 0017h VDD Logic Supply Minimum Program/Erase or Write voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 millivolts 1.7V 01Ch 0020h VDD Logic Supply Maximum Program/Erase or Write voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 millivolts 2V 01Dh 0085h VPP [Programming] Supply Minimum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 millivolts 8.5V 01Eh 0095h VPP [Programming] Supply Maximum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 millivolts 9.5V 01Fh 0008h Typical time-out per single byte/word program = 2n µs 256µs 020h 0009h Typical time-out for Buffer Program = 2n µs 512µs 021h 000Ah Typical time-out per individual block erase = 2n ms 1s 022h 0000h Typical time-out for full chip erase = 2n ms NA 023h 0001h Maximum time-out for word program = 2n times typical 512µs 024h 0001h Maximum time-out for Buffer Program = 2n times typical 1024µs 025h 0002h Maximum time-out per individual block erase = 2n times typical 4s 026h 0000h Maximum time-out for chip erase = 2n times typical NA |
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