SI4463BDY-E3 datasheet(2/5 Pages) VISHAY

부품명	SI4463BDY-E3

상세설명	P-Channel 2.5-V (G-S) MOSFET

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Si4463BDY

Vishay Siliconix

New Product

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2

Document Number: 72789

S-40433—Rev. A, 15-Mar-04

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 mA

−0.6

−1.4

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = −20 V, VGS = 0 V

−1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = −20 V, VGS = 0 V, TJ = 70_C

−10

mA

On-State Drain Currenta

ID(on)

VDS = −5 V, VGS = −4.5 V

−30

A

VGS = −10 V, ID = −13.7 A

0.0085

0.011

Drain-Source On-State Resistancea

rDS(on)

VGS = −4.5 V, ID = −12.3 A

0.010

0.014

W

DS(on)

VGS = −2.5 V, ID = −5 A

0.015

0.020

Forward Transconductancea

gfs

VDS = −10 V, ID = −13.7 A

44

S

Diode Forward Voltagea

VSD

IS = −2.7 A, VGS = 0 V

−0.7

−1.1

V

Dynamicb

Total Gate Charge

Qg

37

56

Gate-Source Charge

Qgs

VDS = −10 V, VGS = −4.5 V, ID = −13.7 A

8.7

nC

Gate-Drain Charge

Qgd

11

Gate Resistance

Rg

f = 1 MHz

2.7

W

Turn-On Delay Time

td(on)

35

55

Rise Time

tr

VDD = −10 V, RL = 10 W

60

90

Turn-Off Delay Time

td(off)

VDD = −10 V, RL = 10 W

ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W

115

170

ns

Fall Time

tf

75

115

Source-Drain Reverse Recovery Time

trr

IF = −2.3 A, di/dt = 100 A/ms

50

75

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

10

20

30

40

50

0.0

0.5

1.0

1.5

2.0

2.5

0

10

20

30

40

50

0

1234

5

VGS = 10 thru 2.5 V

TC = 125_C

−55_C

25_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

2 V

1.5 V

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