전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

STC62WV12816DC 데이터시트(PDF) 7 Page - List of Unclassifed Manufacturers

부품명 STC62WV12816DC
상세설명  Very Low Power/Voltage CMOS SRAM 128k X 16 bit
Download  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  ETC1 [List of Unclassifed Manufacturers]
홈페이지  
Logo ETC1 - List of Unclassifed Manufacturers

STC62WV12816DC 데이터시트(HTML) 7 Page - List of Unclassifed Manufacturers

  STC62WV12816DC Datasheet HTML 1Page - List of Unclassifed Manufacturers STC62WV12816DC Datasheet HTML 2Page - List of Unclassifed Manufacturers STC62WV12816DC Datasheet HTML 3Page - List of Unclassifed Manufacturers STC62WV12816DC Datasheet HTML 4Page - List of Unclassifed Manufacturers STC62WV12816DC Datasheet HTML 5Page - List of Unclassifed Manufacturers STC62WV12816DC Datasheet HTML 6Page - List of Unclassifed Manufacturers STC62WV12816DC Datasheet HTML 7Page - List of Unclassifed Manufacturers STC62WV12816DC Datasheet HTML 8Page - List of Unclassifed Manufacturers STC62WV12816DC Datasheet HTML 9Page - List of Unclassifed Manufacturers  
Zoom Inzoom in Zoom Outzoom out
 7 / 9 page
background image
Revision 1.1
Jan.
2004
7
R0201-
STC62WV12816
STC
STC62WV12816
WRITE CYCLE2 (1,6)
t WC
t CW
(11)
(2)
t WP
t AW
t WHZ
(4,10)
t AS
t WR
(3)
t DH
t DW
D
IN
D
OUT
WE
CE
ADDRESS
(5)
t OW
(7)
(8)
(8,9)
t BW
LB,UB
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals
must be active to initiate a write and any one signal can terminate a write by going inactive.
The data input setup and hold timing should be referenced to the second transition edge of
the signal that terminates the write.
3. TWR is measured from the earlier of CE or WE going high at the end of write cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite phase
to the outputs must not be applied.
5. If the CE low transition occurs simultaneously with the WE low transitions or after the WE
transition, output remain in a high impedance state.
6. OE is continuously low (OE = VIL ).
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE is low during this period, DQ pins are in the output state. Then the data input signals of
opposite phase to the outputs must not be applied to them.
10. The parameter is guaranteed but not 100% tested.
11. TCW is measured from the later of CE going low to the end of write.


유사한 부품 번호 - STC62WV12816DC

제조업체부품명데이터시트상세설명
logo
List of Unclassifed Man...
STC62WV1024 ETC-STC62WV1024 Datasheet
437Kb / 10P
   VERY LOW POWER VOLTAGE CMOS SRAM
STC62WV1024DC ETC-STC62WV1024DC Datasheet
437Kb / 10P
   VERY LOW POWER VOLTAGE CMOS SRAM
STC62WV1024DC-55 ETC-STC62WV1024DC-55 Datasheet
437Kb / 10P
   VERY LOW POWER VOLTAGE CMOS SRAM
STC62WV1024DC-70 ETC-STC62WV1024DC-70 Datasheet
437Kb / 10P
   VERY LOW POWER VOLTAGE CMOS SRAM
STC62WV1024DCG55 ETC-STC62WV1024DCG55 Datasheet
437Kb / 10P
   VERY LOW POWER VOLTAGE CMOS SRAM
More results

유사한 설명 - STC62WV12816DC

제조업체부품명데이터시트상세설명
logo
Brilliance Semiconducto...
BS616LV2013 BSI-BS616LV2013 Datasheet
241Kb / 11P
   Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2016 BSI-BS616LV2016 Datasheet
263Kb / 9P
   Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2018 BSI-BS616LV2018 Datasheet
220Kb / 11P
   Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2012 BSI-BS616LV2012 Datasheet
217Kb / 10P
   Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2017 BSI-BS616LV2017 Datasheet
261Kb / 9P
   Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2011 BSI-BS616LV2011 Datasheet
237Kb / 11P
   Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2019 BSI-BS616LV2019 Datasheet
282Kb / 10P
   Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2010 BSI-BS616LV2010 Datasheet
195Kb / 9P
   Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2015 BSI-BS616LV2015 Datasheet
233Kb / 11P
   Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2016 BSI-BS616LV2016_06 Datasheet
208Kb / 11P
   Very Low Power CMOS SRAM 128K X 16 bit
More results


Html Pages

1 2 3 4 5 6 7 8 9


데이터시트 다운로드

Go To PDF Page


링크 URL




개인정보취급방침
ALLDATASHEET.CO.KR
ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com