SI3467DV datasheet(2/5 Pages) VISHAY

부품명	SI3467DV

상세설명	P-Channel 20-V (D-S) MOSFET

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Si3467DV

Vishay Siliconix

New Product

www.vishay.com

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Document Number: 72658

S-40238—Rev. B, 16-Feb-04

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 mA

−1.0

−3

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = −20 V, VGS = 0 V

−1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = −20 V, VGS = 0 V, TJ = 85_C

−5

mA

On-State Drain Currenta

ID(on)

VDS v −5 V, VGS = −10 V

−25

A

Drain Source On State Resistancea

rDS( )

VGS = −10 V, ID = −5 A

0.042

0.054

W

Drain-Source On-State Resistancea

rDS(on)

VGS = −4.5 V, ID = −1.1 A

0.073

0.094

W

Forward Transconductancea

gfs

VDS = −15 V, ID = −5 A

10

S

Diode Forward Voltagea

VSD

IS = −1.7 A, VGS = 0 V

−0.8

−1.2

V

Dynamicb

Total Gate Charge

Qg

8.7

13

Gate-Source Charge

Qgs

VDS = −10 V, VGS = −10 V, ID = −5.0 A

1.7

nC

Gate-Drain Charge

Qgd

2.5

Gate Resistance

Rg

f = 1 MHz

9

W

Turn-On Delay Time

td(on)

10

15

Rise Time

tr

VDD = −10 V, RL = 10 W

15

25

Turn-Off Delay Time

td(off)

VDD = −10 V, RL = 10 W

ID ^ −1 A, VGEN = −10 V, Rg = 6 W

22

35

ns

Fall Time

tf

18

30

Source-Drain Reverse Recovery Time

trr

IF = −1.7 A, di/dt = 100 A/ms

20

40

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

5

10

15

20

25

0

123

456

0

5

10

15

20

25

0

1234

5

VGS = 10 thru 6 V

TC = −55_C

125_C

4 V

25_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

3 V

5 V

유사한 부품 번호 - SI3467DV

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI3467DV	100Kb / 6P	P-Channel 20-V (D-S) MOSFET Rev. B, 16-Feb-04
Vishay Siliconix	SI3467DV-T1-E3	100Kb / 6P	P-Channel 20-V (D-S) MOSFET Rev. B, 16-Feb-04
VBsemi Electronics Co.,...	SI3467DV-T1-GE3	450Kb / 9P	P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI3467DV	100Kb / 6P	P-Channel 20-V (D-S) MOSFET Rev. B, 16-Feb-04

More results

유사한 설명 - SI3467DV

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI9400DY	58Kb / 4P	P-Channel 20-V (D-S) MOSFET Rev. K, 02-Mar-98
	SI9424BDY	44Kb / 5P	P-Channel 20-V (D-S) MOSFET Rev. A, 07-Oct-02
	SI8407DB	69Kb / 6P	P-Channel 20-V (D-S) MOSFET Rev. B, 17-Jan-05
	SI7401DN	240Kb / 3P	P-Channel 20-V (D-S) MOSFET 31-May-01
	SI7403BDN	106Kb / 8P	P-Channel 20-V (D-S) MOSFET Rev. A, 21-Mar-05
	SIS407DN-T1-GE3	548Kb / 13P	P-Channel 20 V (D-S) MOSFET Rev. B, 06-Sep-10
	SI4477DY-T1-GE3	261Kb / 10P	P-Channel 20-V (D-S) MOSFET Rev. A, 18-May-09
	SIA431DJ	221Kb / 9P	P-Channel 20-V (D-S) MOSFET Rev. B, 21-May-12
	SI1077X	183Kb / 8P	P-Channel 20 V (D-S) MOSFET Rev. A, 24-Dec-12
	SI5457DC	244Kb / 11P	P-Channel 20 V (D-S) MOSFET Rev. A, 06-Sep-10
Analog Power	AM4421P	423Kb / 5P	P-Channel 20-V (D-S) MOSFET

More results

SI3467DV 데이터시트(PDF) 2 Page - Vishay Siliconix

SI3467DV 데이터시트(HTML) 2 Page - Vishay Siliconix

유사한 부품 번호 - SI3467DV

유사한 설명 - SI3467DV

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