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IKW50N60T 데이터시트(Datasheet) 1 Page - Infineon Technologies AG

부품명 IKW50N60T
상세내용  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
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IKW50N60T
TrenchStop Series
q
Power Semiconductors
1
Rev. 2.1 Dec-04
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5
µs
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking Code
Package
Ordering Code
IKW50N60T
600V
50A
1.5V
175
°C
K50T60
TO-247
Q67040S4718
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
600
V
DC collector current, limited by Tjmax
TC = 25
°C
TC = 100
°C
IC
80
1)
50
Pulsed collector current, tp limited by Tjmax
ICpuls
150
Turn off safe operating area (VCE
≤ 600V, Tj ≤ 175°C)
-
150
Diode forward current, limited by Tjmax
TC = 25
°C
TC = 100
°C
IF
100
50
Diode pulsed current, tp limited by Tjmax
IFpuls
150
A
Gate-emitter voltage
VGE
±20
V
Short circuit withstand time
2)
VGE = 15V, VCC
≤ 400V, Tj ≤ 150°C
tSC
5
µs
Power dissipation TC = 25
°C
Ptot
333
W
Operating junction temperature
Tj
-40...+175
Storage temperature
Tstg
-55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
°C
1) Value limited by bond wire
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
P-TO-247-3-1
(TO-220AC)




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