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IKW50N60T 데이터시트(Datasheet) 2 Page - Infineon Technologies AG

부품명 IKW50N60T
상세내용  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
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IKW50N60T
TrenchStop Series
q
Power Semiconductors
2
Rev. 2.1 Dec-04
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC
TO-247 AC
0.45
Diode thermal resistance,
junction – case
RthJCD
TO-247 AC
0.8
Thermal resistance,
junction – ambient
RthJA
TO-247 AC
40
K/W
Electrical Characteristic, at Tj = 25
°C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V(BR)CES VGE=0V, IC=0.2mA
600
-
-
Collector-emitter saturation voltage
VCE(sat)
VGE = 15V, IC=50A
Tj=25
°C
Tj=175
°C
-
-
1.5
1.9
2
-
Diode forward voltage
VF
VGE=0V, IF=50A
Tj=25
°C
Tj=175
°C
-
-
1.65
1.6
2.05
-
Gate-emitter threshold voltage
VGE(th)
IC=0.8mA,VCE=VGE
4.1
4.9
5.7
V
Zero gate voltage collector current
ICES
VCE=600V,
VGE=0V
Tj=25
°C
Tj=175
°C
-
-
-
-
40
1000
µA
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V, IC=50A
-
31
-
S
Integrated gate resistor
RGint
-
Dynamic Characteristic
Input capacitance
Ciss
-
3140
-
Output capacitance
Coss
-
200
-
Reverse transfer capacitance
Crss
VCE=25V,
VGE=0V,
f=1MHz
-
93
-
pF
Gate charge
QGate
VCC=480V, IC=50A
VGE=15V
-
310
-
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE
TO-247-3-1
-
7
-
nH
Short circuit collector current
1)
IC(SC)
VGE=15V,tSC
≤5µs
VCC = 400V,
Tj
≤ 150°C
-
458.3
-
A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.




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