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FDD6635 데이터시트(PDF) 3 Page - Fairchild Semiconductor |
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FDD6635 데이터시트(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page FDD6635 Rev. C2(W) www.fairchildsemi.com D R P DS(ON) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 15 A (Note 2) 0.8 1.2 V trr Diode Reverse Recovery Time 26 ns Qrr Diode Reverse Recovery Charge IF = 15 A, diF/dt = 100 A/µs 16 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 1in 2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0% 3. Maximum current is calculated as: where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A 4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device. 5. Starting TJ = 25°C, L = 1mH, IAS = 15A, VDD = 35V, VGS = 10V |
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