Q2008R4 datasheet(5/10 Pages) LITTELFUSE

부품명	Q2008R4

상세설명	Triacs (0.8 A to 35 A)

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5 / 10 page

Data Sheets

Triacs

E2 - 5

http://www.littelfuse.com

Thyristor Product Catalog

+1 972-580-7777

Electrical Specification Notes

(1) For either polarity of MT2 with reference to MT1 terminal

(2) For either polarity of gate voltage (VGT) with reference to MT1

terminal

(3) See Gate Characteristics and Definition of Quadrants.

(4) See Figure E2.1 through Figure E2.7 for current rating at specific

operating temperature.

(5) See Figure E2.8 through Figure E2.10 for iT versus vT.

(6) See Figure E2.12 for VGT versus TC.

(7) See Figure E2.11 for IGT versus TC.

(8) See Figure E2.14 for IH versus TC.

(9) See Figure E2.13 for surge rating with specific durations.

(10) See Figure E2.15 for tgt versus IGT.

(11) See package outlines for lead form configurations. When ordering

special lead forming, add type number as suffix to part number.

(12) Initial on-state current = 200 mA dc for 0.8 A to10 A devices,

400 mA dc for 15 A to 35 A devices

(13) See Figure E2.1 through Figure E2.6 for maximum allowable case

temperature at maximum rated current.

(14) Pulse width

≤10 µs; IGT ≤ IGTM

(15) RL = 60 Ω for 0.8 A to10 A triacs; RL = 30 Ω for 15 A to 35 A triacs

(16) TC = TJ for test conditions in off state

(17) IGT = 300 mA for 25 A and 35 A devices

(18) Quadrants I, II, III only

(19) Minimum non-trigger VGT at 125 °C is 0.2 V for all except 50 mA

MAX QIV devices which are 0.2 V at 110 °C.

Gate Characteristics

Teccor triacs may be turned on between gate and MT1 terminals

in the following ways:

•

In-phase signals (with standard AC line) using Quadrants I

and III

•

Application of unipolar pulses (gate always positive or nega-

tive), using Quadrants II and III with negative gate pulses and

Quadrants I and IV with positive gate pulses

However, due to higher gate requirements for Quadrant IV, it

is recommended that only negative pulses be applied. If pos-

itive pulses are required, see “Sensitive Triacs” section of

this catalog or contact the factory. Also, see

Figure AN1002.8, “Amplified Gate” Thyristor Circuit.

VTM

VGT

IH

IGTM

PGM

PG(AV)

ITSM

dv/dt(c)

dv/dt

tgt

I2t

di/dt

(1) (5)

Volts

(2) (6) (15)

(18) (19)

Volts

(1) (8) (12)

mAmps

(14)

Amps

(14)

Watts

(9) (13)

Amps

(1) (4) (13)

Volts/µSec

(1)

Volts/

µSec

(10) (17)

µSec

Amps2Sec Amps/µSec

TC = 25 °C

60/50 Hz

TC =

100 °C

TC =

125 °C

MAX

TYP

MIN

TYP

1.6

2.5

35

1.8

20

0.5

120/100

2

150

3

60

70

1.6

2.5

35

1.8

20

0.5

120/100

2

150

3

60

70

1.6

2.5

35

1.8

20

0.5

120/100

2

100

3

60

70

1.6

2.5

35

1.8

20

0.5

120/100

2

75

3

60

70

1.6

2.5

35

1.8

20

0.5

120/100

2

50

3

60

70

1.6

2.5

50

1.8

20

0.5

120/100

4

350

225

3

60

70

1.6

2.5

50

1.8

20

0.5

120/100

4

350

225

3

60

70

1.6

2.5

50

1.8

20

0.5

120/100

4

300

200

3

60

70

1.6

2.5

50

1.8

20

0.5

120/100

4

250

175

3

60

70

1.6

2.5

50

1.8

20

0.5

120/100

4

150

3

60

70

1.6

2.5

70

2

20

0.5

200/167

4

400

275

4

166

100

1.6

2.5

70

2

20

0.5

200/167

4

400

275

4

166

100

1.6

2.5

70

2

20

0.5

200/167

4

350

225

4

166

100

1.6

2.5

70

2

20

0.5

200/167

4

300

200

4

166

100

1.6

2.5

70

2

20

0.5

200/167

4

200

4

166

100

1.8

2.5

100

2

20

0.5

200/167

5

400

275

4

166

100

1.8

2.5

100

2

20

0.5

200/167

5

400

275

4

166

100

1.8

2.5

100

2

20

0.5

200/167

5

350

225

4

166

100

1.8

2.5

100

2

20

0.5

200/167

5

300

200

4

166

100

1.8

2.5

100

2

20

0.5

200/167

5

200

4

166

100

1.4

2.75

50

2

20

0.5

250/220

5

550

475

3

260

100

1.4

2.75

50

2

20

0.5

250/220

5

450

400

3

260

100

1.5

2.75

50

2

20

0.5

350/300

5

550

475

3

508

100

1.5

2.75

50

2

20

0.5

350/300

5

450

400

3

508

100

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New Jersey Semi-Conduct...	Q2008R4	511Kb / 5P	RoHS Compliant

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