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TPCP8402 데이터시트(PDF) 4 Page - Toshiba Semiconductor |
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TPCP8402 데이터시트(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page TPCP8402 2003-09-26 4 N-ch Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ±10 µA Drain cut-off current IDSS VDS = 30 V, VGS = 0 V 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 15 V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3 2.5 V VGS = 4.5 V, ID = 2.1 A 58 77 Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 2.1 A 38 50 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 2.1 A 3.5 7.0 S Input capacitance Ciss 470 Reverse transfer capacitance Crss 60 Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz 80 pF Rise time tr 5.2 Turn-on time ton 8.3 Fall time tf 4.0 Switching time Turn-off time toff Duty <= 1%, tw = 10 µs 22 ns Total gate charge (gate-source plus gate-drain) Qg 10 Gate−source charge 1 Qgs1 1.7 Gate−drain (“miller”) charge Qgd VDD ≈ 24 V, VGS = 10 V, ID = 6 A 2.4 nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP 16.8 A Forward voltage (diode) VDSF IDR = 4.2 A, VGS = 0 V −1.2 V VDD ∼− 15 V 0 V VGS 10 V ID = 2.1 A VOUT |
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