SI4943BDY-T1-E3 datasheet(3/5 Pages) VISHAY

부품명	SI4943BDY-T1-E3

상세설명	Dual P-Channel 20-V (D-S) MOSFET

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Si4943BDY

Vishay Siliconix

New Product

Document Number: 73073

S-41527—Rev. A, 16-Aug-04

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

300

600

900

1200

1500

1800

2100

04

8

12

16

20

0.6

0.8

1.0

1.2

1.4

1.6

−50

−25

0

25

50

75

100

125

150

0

2

4

6

8

10

0

5

10

15

20

25

30

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0

5

10

15

20

25

30

VDS − Drain-to-Source Voltage (V)

Coss

Ciss

VDS = 10 V

ID = 8.4 A

ID − Drain Current (A)

VGS = 10 V

ID = 8.4 A

VGS = 4.5 V

Gate Charge

On-Resistance vs. Drain Current

Qg − Total Gate Charge (nC)

Capacitance

On-Resistance vs. Junction Temperature

TJ − Junction Temperature (_C)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0

2468

10

TJ = 150_C

ID = 8.4 A

30

10

1

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD − Source-to-Drain Voltage (V)

VGS − Gate-to-Source Voltage (V)

TJ = 25_C

Crss

VGS = 10 V

유사한 부품 번호 - SI4943BDY-T1-E3

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI4943BDY	164Kb / 7P	Dual P-Channel 30-V (D-S) MOSFET 01-Jan-2022

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유사한 설명 - SI4943BDY-T1-E3

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SI4943BDY-T1-E3 데이터시트(PDF) 3 Page - Vishay Siliconix

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유사한 부품 번호 - SI4943BDY-T1-E3

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