MJ10015 MJ10016

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (1)

Collector–Emitter Sustaining Voltage (Table 1)

(IC = 100 mA, IB = 0, Vclamp = Rated VCEO)

MJ10015

MJ10016

VCEO(sus)

400

500

—

—

—

—

Vdc

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

ICEV

—

—

0.25

mAdc

Emitter Cutoff Current

(VEB = 2.0 Vdc, IC = 0)

IEBO

—

—

350

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

IS/b

See Figure 7

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 8

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 20 Adc, VCE = 5.0 Vdc)

(IC = 40 Adc, VCE = 5.0 Vdc)

hFE

25

10

—

—

—

—

—

Collector–Emitter Saturation Voltage

(IC = 20 Adc, IB = 1.0 Adc)

(IC = 50 Adc, IB = 10 Adc)

VCE(sat)

—

—

—

—

2.2

5.0

Vdc

Base–Emitter Saturation Voltage

(IC = 20 Adc, IB = 1.0 Adc)

VBE(sat)

—

—

2.75

Vdc

Diode Forward Voltage (2)

(IF = 20 Adc)

Vf

—

2.5

5.0

Vdc

DYNAMIC CHARACTERISTIC

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 100 kHz)

Cob

—

—

750

pF

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

(VCC = 250 Vdc, IC = 20 A,

IB1 = 1.0 Adc, VBE(off) = 5 Vdc, tp = 25 µs

Duty Cycle

v 2%).

td

—

0.14

0.3

µs

Rise Time

(VCC = 250 Vdc, IC = 20 A,

IB1 = 1.0 Adc, VBE(off) = 5 Vdc, tp = 25 µs

Duty Cycle

v 2%).

tr

—

0.3

1.0

µs

Storage Time

IB1 = 1.0 Adc, VBE(off) = 5 Vdc, tp = 25 µs

Duty Cycle

v 2%).

ts

—

0.8

2.5

µs

Fall Time

v 2%).

tf

—

0.3

1.0

µs

Inductive Load, Clamped (Table 1)

Storage Time

(IC = 20 A(pk), Vclamp = 250 V, IB1 = 1.0 A,

VBE(off) = 5.0 Vdc)

tsv

—

1.0

2.5

µs

Crossover Time

(IC = 20 A(pk), Vclamp = 250 V, IB1 = 1.0 A,

VBE(off) = 5.0 Vdc)

tc

—

0.36

1.0

µs

(1) Pulse Test: Pulse Width = 300

µs, Duty Cycle v 2%.

(2) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads.