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FPD750DFN 데이터시트(PDF) 5 Page - Filtronic Compound Semiconductors |
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FPD750DFN 데이터시트(HTML) 5 Page - Filtronic Compound Semiconductors |
5 / 5 page FPD750DFN LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT Phone: +1 408 850-5790 http://www.filtronic.co.uk/semis Revised: 11/14/05 Fax: +1 408 850-5766 Email: sales@filcsi.com Note: The recommended method for measuring IDSS, or any particular IDS, is to set the Drain-Source voltage (VDS) at 1.3V. This measurement point avoids the onset of spurious self-oscillation which would normally distort the current measurement (this effect has been filtered from the I-V curves presented above). Setting the VDS > 1.3V will generally cause errors in the current measurements, even in stabilized circuits. Recommendation: Traditionally a device’s IDSS rating (IDS at VGS = 0V) was used as a predictor of RF power, and for MESFETs there is a correlation between IDSS and P1dB (power at 1dB gain compression). For pHEMTs it can be shown that there is no meaningful statistical correlation between IDSS and P1dB; specifically a linear regression analysis shows r 2 < 0.7, and the regression fails the F-statistic test. IDSS is sometimes useful as a guide to circuit tuning, since the S22 does vary with the quiescent operating point IDS. |
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