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FPD1500P100 데이터시트(PDF) 2 Page - Filtronic Compound Semiconductors |
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FPD1500P100 데이터시트(HTML) 2 Page - Filtronic Compound Semiconductors |
2 / 3 page FPD1500P100 1W PACKAGED POWER PHEMT Phone: +1 408 850-5790 http://www.filtronic.co.uk/semis Released: 6/27/05 Fax: +1 408 850-5766 Email: sales@filcsi.com • RECOMMENDED BIAS CONDITIONS: Drain-Source Voltage: 5V to 8V Drain-Source Current: 33% to 50% IDSS • ABSOLUTE MAXIMUM RATINGS1 Parameter Symbol Test Conditions Min Max Units Drain-Source Voltage VDS -3V < VGS < +0V 9 V Gate-Source Voltage VGS 0V < VDS < +8V -3 V Drain-Source Current IDS For VDS > 2V IDSS mA Gate Current IG Forward or reverse current 15 mA RF Input Power2 PIN Under any acceptable bias state 350 mW Channel Operating Temperature TCH Under any acceptable bias state 175 ºC Storage Temperature TSTG Non-Operating Storage -40 150 ºC Total Power Dissipation PTOT See De-Rating Note below 3.2 W Gain Compression Comp. Under any bias conditions 5 dB Simultaneous Combination of Limits3 2 or more Max. Limits 80 % 1TAmbient = 22°C unless otherwise noted 2Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3Users should avoid exceeding 80% of 2 or more Limits simultaneously Notes: • Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. • Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib. • Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power • Absolute Maximum Power Dissipation to be de-rated as follows above 22 °C: PTOT= 3.2W – (0.021W/°C) x THS where THS = heatsink or ambient temperature above 22°C Example: For a 85 °C heatsink temperature: PTOT = 3.2W – (0.021 x (85 – 22)) = 1.88W • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 0 (< 250V) per JESD22-A114-B, Human Body Model, and Class A (< 200V) per JESD22-A115-A, Machine Model. |
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