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FPD1500P100 데이터시트(PDF) 2 Page - Filtronic Compound Semiconductors

부품명 FPD1500P100
상세설명  1W PACKAGED POWER PHEMT
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제조업체  FILTRONIC [Filtronic Compound Semiconductors]
홈페이지  http://www.filtronic.co.uk/
Logo FILTRONIC - Filtronic Compound Semiconductors

FPD1500P100 데이터시트(HTML) 2 Page - Filtronic Compound Semiconductors

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FPD1500P100
1W PACKAGED POWER PHEMT
Phone: +1 408 850-5790
http://www.filtronic.co.uk/semis
Released: 6/27/05
Fax: +1 408 850-5766
Email: sales@filcsi.com
RECOMMENDED BIAS CONDITIONS:
Drain-Source Voltage:
5V to 8V
Drain-Source Current:
33% to 50% IDSS
ABSOLUTE MAXIMUM RATINGS1
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain-Source Voltage
VDS
-3V < VGS < +0V
9
V
Gate-Source Voltage
VGS
0V < VDS < +8V
-3
V
Drain-Source Current
IDS
For VDS > 2V
IDSS
mA
Gate Current
IG
Forward or reverse current
15
mA
RF Input Power2
PIN
Under any acceptable bias state
350
mW
Channel Operating Temperature
TCH
Under any acceptable bias state
175
ºC
Storage Temperature
TSTG
Non-Operating Storage
-40
150
ºC
Total Power Dissipation
PTOT
See De-Rating Note below
3.2
W
Gain Compression
Comp.
Under any bias conditions
5
dB
Simultaneous Combination of Limits3
2 or more Max. Limits
80
%
1TAmbient = 22°C unless otherwise noted
2Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
Absolute Maximum Power Dissipation to be de-rated as follows above 22
°C:
PTOT= 3.2W – (0.021W/°C) x THS
where THS = heatsink or ambient temperature above 22°C
Example: For a 85
°C heatsink temperature: PTOT = 3.2W – (0.021 x (85 – 22)) = 1.88W
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 0 (< 250V) per JESD22-A114-B, Human Body
Model, and Class A (< 200V) per JESD22-A115-A, Machine Model.


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