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FPD10000AF 데이터시트(PDF) 2 Page - Filtronic Compound Semiconductors

부품명 FPD10000AF
상세설명  10W PACKAGED POWER PHEMT
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제조업체  FILTRONIC [Filtronic Compound Semiconductors]
홈페이지  http://www.filtronic.co.uk/
Logo FILTRONIC - Filtronic Compound Semiconductors

FPD10000AF 데이터시트(HTML) 2 Page - Filtronic Compound Semiconductors

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PRELIMINARY
FPD10000AF
10W PACKAGED POWER PHEMT
Phone: +1 408 850-5790
http://www.filtronic.co.uk/semis
Revised: 12/07/04
Fax: +1 408 850-5766
Email: sales@filcsi.com
RECOMMENDED OPERATING BIAS CONDITIONS
Drain-Source Voltage:
From 10 to 12V
Quiescent Current:
From 180 (Class B) to 300 mA (Class AB) operation
ABSOLUTE MAXIMUM RATINGS1
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain-Source Voltage
VDS
-3V < VGS < +0V
16
V
Gate-Source Voltage
VGS
0V < VDS < +15V
-3
V
Drain-Source Current
IDS
For VDS > 2V
50% IDSS
mA
Gate Current
IG
Forward / Reverse current
+50/-8
mA
RF Input Power2
PIN
Under any acceptable bias state
1.75
W
Channel Operating Temperature
TCH
Under any acceptable bias state
175
ºC
Storage Temperature
TSTG
Non-Operating Storage
-40
150
ºC
Total Power Dissipation
PTOT
See De-Rating Note below
42
W
Gain Compression
Comp.
Under any bias conditions
5
dB
Simultaneous Combination of Limits3
2 or more Max. Limits
80
%
1TAmbient = 22°C unless otherwise noted
2Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device.
Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where:
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
Total Power Dissipation to be de-rated as follows above 22
°C:
PTOT= 42 - (0.286W/°C) x TPACK
where TPACK = source tab lead temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 55
°C Source flange temperature: PTOT = 42 - (0.286 x (55 – 22)) = 32.6W
Note on Thermal Resistivity: The nominal value of 3.5
°C/W is measured with the package mounted on a large
heatsink with thermal compound to ensure adequate contact. The package temperature is referred to the Source
flange.
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model.
Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.


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