전자부품 데이터시트 검색엔진 |
|
FPD10000AF 데이터시트(PDF) 2 Page - Filtronic Compound Semiconductors |
|
FPD10000AF 데이터시트(HTML) 2 Page - Filtronic Compound Semiconductors |
2 / 3 page PRELIMINARY FPD10000AF 10W PACKAGED POWER PHEMT Phone: +1 408 850-5790 http://www.filtronic.co.uk/semis Revised: 12/07/04 Fax: +1 408 850-5766 Email: sales@filcsi.com • RECOMMENDED OPERATING BIAS CONDITIONS Drain-Source Voltage: From 10 to 12V Quiescent Current: From 180 (Class B) to 300 mA (Class AB) operation • ABSOLUTE MAXIMUM RATINGS1 Parameter Symbol Test Conditions Min Max Units Drain-Source Voltage VDS -3V < VGS < +0V 16 V Gate-Source Voltage VGS 0V < VDS < +15V -3 V Drain-Source Current IDS For VDS > 2V 50% IDSS mA Gate Current IG Forward / Reverse current +50/-8 mA RF Input Power2 PIN Under any acceptable bias state 1.75 W Channel Operating Temperature TCH Under any acceptable bias state 175 ºC Storage Temperature TSTG Non-Operating Storage -40 150 ºC Total Power Dissipation PTOT See De-Rating Note below 42 W Gain Compression Comp. Under any bias conditions 5 dB Simultaneous Combination of Limits3 2 or more Max. Limits 80 % 1TAmbient = 22°C unless otherwise noted 2Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3Users should avoid exceeding 80% of 2 or more Limits simultaneously Notes: • Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device. • Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where: PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power • Total Power Dissipation to be de-rated as follows above 22 °C: PTOT= 42 - (0.286W/°C) x TPACK where TPACK = source tab lead temperature above 22°C (coefficient of de-rating formula is the Thermal Conductivity) Example: For a 55 °C Source flange temperature: PTOT = 42 - (0.286 x (55 – 22)) = 32.6W • Note on Thermal Resistivity: The nominal value of 3.5 °C/W is measured with the package mounted on a large heatsink with thermal compound to ensure adequate contact. The package temperature is referred to the Source flange. • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. |
유사한 부품 번호 - FPD10000AF |
|
유사한 설명 - FPD10000AF |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |