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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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TS13003A 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TS13003A 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 3 page  TS13003A 1-1 2004/09 rev. B TS13003A High Voltage NPN Transistor Pin assignment: 1. Emitter 2. Collector 3. Base BVCEO = 430V BVCBO = 800V Ic = 1.5A VCE (SAT), = 0.8V @ Ic / Ib = 0.5A / 0.1A Features High voltage. High speed switching Structure Silicon triple diffused type. NPN silicon transistor Ordering Information Part No. Packing Package TS13003ACT B0 Bulk Pack TO-92 TS13003ACT A3 Ammo Pack TO-92 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 800V V Collector-Emitter Voltage VCEO 430V V Emitter-Base Voltage VEBO 9 V DC 1.5 Collector Current Pulse IC 3 A Collector Power Dissipation PD 0.6 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: 1. Single pulse, Pw = 300uS, Duty <= 2% Electrical Characteristics (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = 10mA, IB = 0 BVCBO 800 -- -- V Collector-Emitter Breakdown Voltage IC = 10mA, IE = 0 BVCEO 430 -- -- V Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 BVEBO 9 -- -- V Collector Cutoff Current VCB = 700V, IE = 0 ICBO -- -- 10 uA Emitter Cutoff Current VEB = 9V, IC = 0 IEBO -- -- 10 uA Collector-Emitter Saturation Voltage IC / IB = 1.5A / 0.5A IC / IB = 0.5A / 0.1A VCE(SAT)1 VCE(SAT)2 -- -- -- -- 3 0.8 V DC Current Gain VCE = 10V, IC = 0.4A VCE = 2V, IC = 1.0A VCE = 5V, IC = 10uA hFE 20 8 6 -- -- -- 40 40 40 Frequency VCE = 10V, IC = 0.1A fT 4 MHz Output Capacitance VCB = 10V, f = 0.1MHz Cob 21 pF Turn On Time tON 1.1 uS Storage Time tSTG 4 uS Fall Time VCC = 125V, IC = 1A, IB1 = 0.2A, IB2 = - 0.2A, RL = 125ohm tf 0.7 uS Note : pulse test: pulse width <=300uS, duty cycle <=2% |
유사한 부품 번호 - TS13003A |
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유사한 설명 - TS13003A |
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