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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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TS13005 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TS13005 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 3 page  TS13005 1-1 2003/12 rev. B TS13005 High Voltage NPN Transistor Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 700V Ic = 4A VCE (SAT), = 1V @ Ic / Ib = 4A / 1A Features High voltage. High speed switching Structure Silicon triple diffused type. NPN silicon transistor Ordering Information Part No. Packing Package TS13005CZ TO-220 TS13005CI Tube ITO-220 TS13005CP T&R TO-252 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 700V V Collector-Emitter Voltage VCEO 400V V Emitter-Base Voltage VEBO 9 V DC 4 Collector Current Pulse IC 8 A TO-220 2 ITO-220 1.5 Collector Power Dissipation TO-252 PD 1.3 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 65 to +150 oC Note: 1. Single pulse, Pw = 300uS, Duty <= 2% Electrical Characteristics (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = 10mA, IB = 0 BVCBO 700 V Collector-Emitter Breakdown Voltage IC = 10mA, IE = 0 BVCEO 400 V Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 BVEBO 9 V Collector Cutoff Current VCB = 700V, IE = 0 ICBO 10 mA Emitter Cutoff Current VEB = 9V, IC = 0 IEBO 1 mA Collector-Emitter Saturation Voltage IC / IB = 4A / 1A IC / IB = 1A / 0.2A VCE(SAT)1 VCE(SAT)2 1 0.5 V DC Current Gain VCE = 5V, IC = 2A hFE 8 40 Frequency VCE = 10V, IC = 0.5A fT 4 MHz Output Capacitance VCB = 10V, f = 0.1MHz Cob 65 pF Turn On Time tON 0.8 uS Storage Time tSTG 4 uS Fall Time VCC = 125V, IC = 2A, IB1 = 0.4A, IB2 = - 0.4A, RL = 62.5ohm tf 0.9 uS Note : pulse test: pulse width <=300uS, duty cycle <=2% ITO-220 |
유사한 부품 번호 - TS13005 |
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유사한 설명 - TS13005 |
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