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TSD965LCTB0 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSD965LCTB0 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page TSD965L 1-4 2003/12 rev. A TSD965L Low Vce(sat) NPN Transistor BVCEO = 10V Ic = 5A VCE (SAT), = 0.23V(typ.) @Ic / Ib = 3A / 60mA Features Low VCE (SAT). High current capability High allowable power dissipation Structure Epitaxial planar type. Ordering Information Part No. Packing Package TSD965LCT B0 Bulk Pack TSD965LCT A3 Ammo Pack TO-92 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 15V V Collector-Emitter Voltage VCEO 10V V Emitter-Base Voltage VEBO 7 V DC 5 Collector Current Pulse IC 9 (note 1) A Collector Power Dissipation PD 0.75 (note 2) W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: 1. Single pulse, Pw = 350uS, Duty <= 2% 2. When a device is mounted on a glass epoxy board, Measuring 35mm x 30mm x 1mm Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = 100uA, IE = 0 BVCBO 15 -- -- V Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 BVCEO 10 -- -- V Emitter-Base Breakdown Voltage IE = 10uA, IC = 0 BVEBO 7 -- -- V Collector Cutoff Current VCB = 15V, IE = 0 ICBO -- -- 100 nA Emitter Cutoff Current VEB = 5V, IC = 0 IEBO -- -- 100 nA IC / IB = 1.5A / 30mA VCE(SAT) -- -- 0.18 V Collector-Emitter Saturation Voltage IC / IB = 3.0A / 60mA VCE(SAT) -- 0.23 0.35 V Base-Emitter Saturation Voltage IC / IB = 1.5A / 30mA VCE(SAT) -- 0.95 1.2 V VCE = 2V, IC = 0.5A hFE 400 -- -- VCE = 2V, IC = 2.0A hFE 390 -- 820 DC Current Transfer Ratio VCE = 2V, IC = 5.0A hFE 185 -- -- Transition Frequency VCE = 6V, IC = 50mA, f = 100MHz fT -- 170 -- MHz Output Capacitance VCB = 10V, f=1MHz Cob -- 25 -- pF Note : pulse test: pulse width <=380uS, duty cycle <=2% Pin assignment: 1. Emitter 2. Collector 3. Base |
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