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IHP10T120 데이터시트(Datasheet) 4 Page - Infineon Technologies AG

부품명 IHP10T120
상세내용  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
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IHP10T120
Soft Switching Series
Power Semiconductors
4
Rev. 2 Jun-04
Switching Characteristic, Inductive Load, at Tj=150
°C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
45
-
Rise time
tr
-
24
-
Turn-off delay time
td(off)
-
592
-
Fall time
tf
-
177
-
ns
Turn-on energy
Eon
-
0.83
-
Turn-off energy
Eoff
-
1.19
-
Total switching energy
Ets
Tj=150
°C,
VCC=610V,IC=10A,
VGE= 0 /15V,
RG= 81
Lσ
1) =180nH,
Cσ
1) =39pF
Energy losses include
“tail” and diode
reverse recovery.
-
2.02
-
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
-
185
-
ns
Diode reverse recovery charge
Qrr
-
630
-
nC
Diode peak reverse recovery current
Irrm
Tj=150
°C
VR=800V, IF=4A,
diF/dt=750A/
µs
-
8.1
-
A
1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.




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