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IHP10T120 데이터시트(Datasheet) 1 Page - Infineon Technologies AG

부품명 IHP10T120
상세내용  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
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IHP10T120
Soft Switching Series
Power Semiconductors
1
Rev. 2 Jun-04
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
Short circuit withstand time – 10
µs
Designed for :
- Soft Switching Applications
- Induction Heating
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
- Very low Vce(sat)
Very soft, fast recovery anti-parallel EmCon
HE diode
Low EMI
Application specific optimisation of inverse diode
G
C
E
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
Ordering Code
IHP10T120
1200V
10A
1.7V
150
°C
H10T120
TO-220-3-1
Q67040-S4650
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
V
DC collector current
TC = 25
°C
TC = 100
°C
IC
16
10
Pulsed collector current, tp limited by Tjmax
ICpuls
24
Turn off safe operating area
VCE
≤ 1200V, Tj ≤ 150°C
-
24
Diode forward current
TC = 25
°C
TC = 100
°C
IF
11
7
Diode pulsed current, tp limited by Tjmax, Tc = 25°C
IFpuls
16.5
A
Diode surge non repetitive current, tp limited by Tjmax
TC = 25
°C, tp = 10ms, sine halfwave
TC = 25
°C, tp ≤ 2.5µs, sine halfwave
TC = 100
°C, tp ≤ 2.5µs, sine halfwave
IFSM
28
50
40
A
Gate-emitter voltage
VGE
±20
V
Short circuit withstand time
1)
VGE = 15V, VCC
≤ 1200V, Tj ≤ 150°C
tSC
10
µs
Power dissipation, TC = 25
°C
Ptot
138
W
Operating junction temperature
Tj
-40...+150
Storage temperature
Tstg
-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
P-TO-220-3-1
(TO-220AB)




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