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IHP10T120 데이터시트(Datasheet) 2 Page - Infineon Technologies AG

부품명 IHP10T120
상세내용  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
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IHP10T120
Soft Switching Series
Power Semiconductors
2
Rev. 2 Jun-04
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC
0.9
Diode thermal resistance,
junction – case
RthJCD
2.6
IGBT thermal resistance,
junction – ambient
RthJA
62
K/W
Electrical Characteristic, at Tj = 25
°C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V(BR)CES VGE=0V, IC=0.5mA
1200
-
-
Collector-emitter saturation voltage
VCE(sat)
VGE = 15V, IC=10A
Tj=25
°C
Tj=125
°C
Tj=150
°C
-
-
-
1.7
2.0
2.2
2.2
-
-
Diode forward voltage
VF
VGE=0V, IF=4A
Tj=25
°C
Tj=150
°C
-
-
1.65
1.7
2.15
-
Gate-emitter threshold voltage
VGE(th)
IC=0.6mA,VCE=VGE
5.0
5.8
6.5
V
Zero gate voltage collector current
ICES
VCE=1200V,
VGE=0V
Tj=25
°C
Tj=150
°C
-
-
-
-
0.2
2.0
mA
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V, IC=10A
-
10
-
S
Integrated gate resistor
RGint
none




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