1

Motorola Bipolar Power Transistor Device Data

Complementary Silicon Plastic

Power Transistors

Specifically designed for power audio output, or high power drivers in audio

amplifiers.

• DC Current Gain Specified up to 8.0 Amperes at Temperature

• All On Characteristics at Temperature

• High SOA: 20 A, 18 V, 100 ms

• TO–247AE Package

MAXIMUM RATINGS

Rating

Symbol

MJW21191

MJW21192

Unit

Collector–Emitter Voltage

VCEO

150

Vdc

Collector–Base Voltage

VCB

150

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current — Continuous

— Peak

IC

8.0

16

Adc

Base Current

IB

2.0

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

PD

100

0.65

Watts

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

0.65

_C/W

Thermal Resistance, Junction to Ambient

R

θJA

50

_C/W

1.0

Figure 1. Typical Capacitance @ 25

°C

VR, REVERSE VOLTAGE (V)

1.0

10

100

1000

100

1000

10

NPN

PNP

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJW21192/D

MJW21192

MJW21191

8.0 AMPERES

POWER TRANSISTORS

COMPLEMENTARY

SILICON

150 VOLTS

100 WATTS

NPN

PNP

CASE 340K–01

TO–247AE