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TPS65150 데이터시트(Datasheet) 4 Page - Texas Instruments

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부품명 TPS65150
상세내용  Low Input Voltage, Compact LCD Bias IC With VCOM Buffer
PDF  28 Pages
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제조사  TI [Texas Instruments]
홈페이지  http://www.ti.com
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TPS65150
SLVS576 – SEPTEMBER 2005
ELECTRICAL CHARACTERISTICS (continued)
VIN = 3.3 V, Vs = 10 V, T
A = –40°C to 85°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VFB
Feedback regulation voltage
CTRL = GND, VGH = open
1.187
1.214
1.238
V
IFB
Feedback input bias current
CTRL = GND, VGH = open
10
100
nA
RDS(on)
Q3 P-Channel switch RDSon
IOUT = 20 mA
1.1
IDRP = 50 mA,
420
650
VFBP = VFBPNominal– 5%
VDropN
Current sink voltage drop(1)
mV
IDRP= 100 mA,
900
1400
VFBP = VFBPNominal– 5%
Load regulation
VGH=24V, Iload=0mA to 20mA
0.07
%/mA
VGH ISOLATION SWITCH, GATE VOLTAGE FALL TIME CONTROL
RDS(on)
Q5 - Pass MOSFET RDSon
IOUT = 20 mA
12
30
Iadj
Capacitor charge current
Vadj = 20 V, CPI = 30 V
160
200
240
µA
Minimum output voltage
Vadj = 0 V, IVGH = 10 mA
2
V
IVGH
Maximum output current
20
mA
TIMING CIRCUITS DLY1, DLY2, FDLY
IDLY1
Drive current into delay capacitor DLY1
VDLY1 = 1.213 V
3
5
7
µA
IDLY2
Drive current into delay capacitor DLY1
VDLY2 = 1.213 V
3
5
7
µA
RFDLY
Fault time delay resistror(2)
250
450
650
k
GATE DRIVE (GD)
V(GD, Vs)
Gate drive threshold(3)
Vs rising
–12% of
–4% of
V
Vs
Vs
VOL
Gate drive output low voltage
I(sink) = 500 µA
0.5
V
ILKG
Gate drive output leakage current
VGD = 15 V
0.001
1
µA
Vcom Buffer
VCM
Common mode input range
2.25
(Vs) –2V
V
Vos
Input offset voltage
IOUT = 0 mA
–25
25
mV
Io =
±25 mA
–37
37
Io =
±50 mA
–77
55
DC load regulation
mV
Io =
±100 mA
–85
85
Io =
±150 mA
–110
110
IB
VCOMIN Input bias current
–300
–30
300
nA
Ipeak
Peak output current
Vs = 15 V
1.2
Vs = 10 V
0.65
A
Vs = 5 V
0.15
(2)
The fault time is calculated as: tF= C × R = C × 450 kΩ
(3)
The GD signal is latched low when the main boost converter output Vs is within regulation. The GD signal is reset when the input
voltage or enable of the boost converter is cycled low.
4




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