IRL2910L datasheet(2/10 Pages) IRF

부품명	IRL2910L

상세설명	HEXFET POWER MOSFET

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제조업체	IRF [International Rectifier]

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IRL2910S/L

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

100

V

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

0.12

V/°C Reference to 25°C, ID = 1mA

0.026

VGS = 10V, ID = 29A

0.030

Ω

VGS = 5.0V, ID = 29A

0.040

VGS = 4.0V, ID = 24A

VGS(th)

Gate Threshold Voltage

1.0

2.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

28

S

VDS = 50V, ID = 29A

25

VDS = 100V, VGS = 0V

250

VDS = 80V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage

100

nA

VGS = 16V

Gate-to-Source Reverse Leakage

-100

VGS = -16V

Qg

Total Gate Charge

140

ID = 29A

Qgs

Gate-to-Source Charge

20

nC

VDS = 80V

Qgd

Gate-to-Drain ("Miller") Charge

81

VGS = 5.0V, See Fig. 6 and 13

td(on)

Turn-On Delay Time

11

VDD = 50V

tr

Rise Time

100

ID = 29A

td(off)

Turn-Off Delay Time

49

RG = 1.4Ω, VGS = 5.0V

tf

Fall Time

55

RD = 1.7Ω, See Fig. 10

Between lead,

and center of die contact

Ciss

Input Capacitance

3700

VGS = 0V

Coss

Output Capacitance

630

pF

VDS = 25V

Crss

Reverse Transfer Capacitance

330

= 1.0MHz, See Fig. 5

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

IDSS

Drain-to-Source Leakage Current

RDS(on)

Static Drain-to-Source On-Resistance

LS

Internal Source Inductance

7.5

ns

nH

µA

Source-Drain Ratings and Characteristics

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Notes:

Pulse width ≤ 300µs; duty cycle ≤ 2%.

VDD = 25V, starting TJ = 25°C, L = 1.2mH

RG = 25Ω, IAS = 29A. (See Figure 12)

ISD ≤ 29A, di/dt ≤ 490A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

Uses IRL2910 data and test conditions

** When mounted on 1" square PCB ( FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

VSD

Diode Forward Voltage

1.3

V

TJ = 25°C, IS = 29A, VGS = 0V

trr

Reverse Recovery Time

240 350

ns

TJ = 25°C, IF = 29A

Qrr

Reverse RecoveryCharge

1.8

2.7

µC

di/dt = 100A/µs

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

S

D

G

55

190

A

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