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2PG402 데이터시트(PDF) 1 Page - Panasonic Semiconductor

부품명 2PG402
상세설명  Insulated Gate Bipolar Transistor
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제조업체  PANASONIC [Panasonic Semiconductor]
홈페이지  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2PG402 데이터시트(HTML) 1 Page - Panasonic Semiconductor

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1
IGBTs
unit: mm
2PG402
Insulated Gate Bipolar Transistor
s Features
q High breakdown voltage: V
CES = 400V
q Allowing to control large current: I
C(peak) = 130A
q Housed in the surface mounting package
s Applications
q For flash-light for use in a camera
1: Emitter
2: Collector
3: Gate
U Type Package
s Absolute Maximum Ratings (T
C = 25°C)
Parameter
Collector to emitter voltage
Gate to emitter voltage
Collector current
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
TC = 25°C
Ta = 25°C
Symbol
VCES
VGES
IC
ICP
PC
Tch
Tstg
Ratings
400
±8
5
130
10
1
150
−55 to +150
Unit
V
V
A
A
W
°C
°C
s Electrical Characteristics (T
C = 25°C)
Parameter
Collector to emitter cut-off current
Gate to emitter leakage current
Collector to emitter breakdown voltage
Gate threshold voltage
Collector to emitter
saturation voltage
Input capacitance (Common Emitter)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Symbol
ICES
IGES
VCES
VGE(th)
VCE(sat)
Cies
td(on)
tr
td(off)
tf
Conditions
VCE = 320V, VGE = 0
VGE = ±8V, VCE = 0
IC = 1mA, VGE = 0
VCE = 10V, IC = 1mA
VGE = 5V, IC = 5A
VGE = 5V, IC = 130A
VCE = 10V, VGE = 0, f = 1MHz
VCC = 300V, IC = 130A
VGE = 5V, Rg = 25Ω
min
400
0.5
typ
1930
130
1.4
350
1.5
max
10
±1
1.5
2
10
Unit
µA
µA
V
V
V
pF
ns
µs
ns
µs
6.5
±0.1
5.3
±0.1
4.35
±0.1
3.0
±0.1
0.85
±0.1
1
4.6
±0.1
0.75
±0.1
0.5
±0.1
Marking
0.05 to 0.15
1.0
±0.1
23


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