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SI6552DQ 데이터시트(PDF) 6 Page - Vishay Siliconix |
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SI6552DQ 데이터시트(HTML) 6 Page - Vishay Siliconix |
6 / 6 page Si6552DQ Vishay Siliconix www.vishay.com 2-6 Document Number: 70175 S-03419—Rev. G, 03-Mar-03 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.00 0.04 0.08 0.12 0.16 0.20 02468 - 1.0 - 0.5 0.0 0.5 1.0 - 50 - 25 0 25 50 75 100 125 150 2 1 0.1 0.01 10-4 10-3 10-2 10-1 110 30 1 10 20 ID = 2.5 A ID = 250 µA Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.001 0 0.1 20 25 5 10 15 110 30 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 125_C/W 3. TJM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) TJ - Temperature (_C) Time (sec) TJ = 25_C TJ = 150_C 0.01 |
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