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M39P0R9070E0 데이터시트(Datasheet) 1 Page - STMicroelectronics

부품명 M39P0R9070E0
상세내용  512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
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제조사  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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PRELIMINARY DATA
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Rev. 1
November 2005
1/26
1
M39P0R9070E0
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory
128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
Features summary
Multi-chip package
– 1die of 512 Mbit (32Mb x 16, Multiple Bank,
Multi-Level, Burst) Flash memory
– 1 die of 128 Mbit (4 Banks of 2Mb x16)
Low
Power Synchronous Dynamic RAM
Supply voltage
–VDDF = VCCP = VDDQ = 1.7 to 1.95V
–VPPF = 9V for fast program (12V tolerant)
Electronic signature
– Manufacturer Code: 20h
– Device Code: 8819
Package
– ECOPACK® (RoHS compliant)
Flash memory
Synchronous / asynchronous read
– Synchronous Burst Read mode:
108MHz, 66MHz
– Asynchronous Page Read mode
– Random Access: 93ns
Programming time
– 4µs typical Word program time using Buffer
Enhanced Factory Program command
Memory organization
– Multiple Bank Memory Array: 64 Mbit
Banks
– Four Extended Flash Array (EFA) Blocks of
64 Kbits
Dual operations
– program/erase in one Bank while read in
others
– No delay between read and write
operations
Security
– 64-bit unique device number
– 2112-bit user programmable OTP Cells
100,000 program/erase cycles per block
Block locking
– All Blocks locked at power-up
– Any combination of Blocks can be locked
with zero latency
–WPF for Block Lock-Down
– Absolute Write Protection with VPPF = VSS
Common Flash Interface (CFI)
LPSDRAM
128Mbit synchronous dynamic RAM
– Organized as 4 Banks of 2 MWords, each
16 bits wide
Synchronous burst read and write
– Fixed Burst Lengths: 1, 2, 4, 8 words or Full
Page
– Burst Types: Sequential and Interleaved.
– Maximum Clock Frequency: 104MHz
–CAS Latency 2, 3
Automatic precharge
Low power features:
– PASR (Partial Array Self Refresh),
– Automatic TCSR (Temperature
Compensated Self Refresh)
– Driver Strength (DS)
– Deep Power-Down Mode
Auto Refresh and Self Refresh
TFBGA105 (ZAD)
9 x 11mm
FBGA
www.st.com




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