전자부품 데이터시트 검색엔진 |
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HLMP-K105-L00DD 데이터시트(PDF) 3 Page - Agilent(Hewlett-Packard) |
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HLMP-K105-L00DD 데이터시트(HTML) 3 Page - Agilent(Hewlett-Packard) |
3 / 7 page 3 Absolute Maximum Ratings at TA = 25°C Parameter Value Peak Forward Current[1,2] 300 mA Average Forward Current[2] 20 mA DC Current[3] 30 mA Power Dissipation 87 mW Reverse Voltage (IR = 100 µA) 5 V Transient Forward Current (10 µs Pulse)[4] 500 mA LED Junction Temperature 110 °C Operating Temperature Range -20 to +100 °C Storage Temperature Range -55 to +100 °C Wave Soldering Temperature [1.59 mm (0.063 in.) from body] 250 °C for 3 seconds Lead Solder Dipping Temperature [1.59 mm (0.063 in.) from body] 260 °C for 5 seconds Notes: 1. Maximum IPEAK at f = 1 kHz, DF = 6.7%. 2. Refer to Figure 6 to establish pulsed operating conditions. 3. Derate linearly as shown in Figure 5. 4. The transient peak current is the maximum non-recurring peak current the device can withstand without damaging the LED die and wire bonds. It is not recommended that the device be operated at peak currents beyond the Absolute Maximum Peak Forward Current. Electrical/Optical Characteristics at TA = 25°C Symbol Description Min. Typ. Max. Unit Test Condition VF Forward Voltage 1.8 2.2 V IF = 20 mA VR Reverse Breakdown Voltage 5.0 15.0 V IR = 100 µA λ p Peak Wavelength 645 nm Measurement at Peak λ d Dominant Wavelength 637 nm Note 1 ∆λ1/2 Spectral Line Halfwidth 20 nm τ S Speed of Response 30 ns Exponential Time Constant, e-t/TS C Capacitance 30 pF VF = 0, f = 1 MHz R θ J-PIN Thermal Resistance 260[3] °C/W Junction to Cathode Lead 210[4] 290[5] η V Luminous Efficacy 80 Im/W Note 2 Notes: 1. The dominant wavelength, λ d, is derived from the CIE chromaticity diagram and represents the color of the device. 2. The radiant intensity, Ie, in watts per steradian, may be found from the equation Ie = lV/ηV, where IV is the luminous intensity in candelas and ηV is luminous efficacy in lumens/watt. 3. HLMP-D101. 4. HLMP-D105. 5. HLMP-K101/-K105. |
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