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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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KFG5616Q1A-PEB6 데이터시트(PDF) 9 Page - Samsung semiconductor |
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KFG5616Q1A-PEB6 데이터시트(HTML) 9 Page - Samsung semiconductor |
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9 / 113 page  OneNAND256(KFG5616x1A-xxB6) FLASH MEMORY 9 B (capital letter) Byte, 8bits W (capital letter) Word, 16bits b (lower-case letter) Bit ECC Error Correction Code Calculated ECC ECC that has been calculated during a load or program access Written ECC ECC that has been stored as data in the NAND Flash array or in the BufferRAM BufferRAM On-chip internal buffer consisting of BootRAM and DataRAM BootRAM A 1KB portion of the BufferRAM reserved for Boot Code buffering DataRAM A 2KB portion of the BufferRAM reserved for Data buffering Sector Part of a Page of which 512B is the main data area and 16B is the spare data area. It is also the minimum Load/Program/Copy-Back Program unit during a 1~2 sector operation is available. Data unit Possible data unit to be read from memory to BufferRAM or to be programmed to memory. - 528B of which 512B is in main area and 16B in spare area - 1056B of which 1024B is in main area and 32B in spare area 2.2 Definitions |
유사한 부품 번호 - KFG5616Q1A-PEB6 |
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유사한 설명 - KFG5616Q1A-PEB6 |
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