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GS71116J-10I 데이터시트(PDF) 4 Page - List of Unclassifed Manufacturers

부품명 GS71116J-10I
상세설명  1Mb Asynchronous SRAM
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GS71116J-10I 데이터시트(HTML) 4 Page - List of Unclassifed Manufacturers

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Rev: 1.06 6/2000
4/15
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS71116TP/J/U
Note:
1. Input overshoot voltage should be less than VDD+2V and not exceed 20ns.
2. Input undershoot voltage should be greater than -2V and not exceed 20ns.
Notes:
1. Tested at TA=25°C, f=1MHz
2. These parameters are sampled and are not 100% tested
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -12/15
VDD
3.0
3.3
3.6
V
Supply Voltage for -10
VDD
3.135
3.3
3.6
V
Input High Voltage
VIH
2.0
-
VDD+0.3
V
Input Low Voltage
VIL
-0.3
-
0.8
V
Ambient Temperature,
Commercial Range
TAc
0
-
70
oC
Ambient Temperature,
Industrial Range
TAI
-40
-
85
oC
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
CIN
VIN=0V
5
pF
Output Capacitance
COUT
VOUT=0V
7
pF
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage
Current
IIL
VIN = 0 to VDD
-1uA
1uA
Output Leakage
Current
ILO
Output High Z
VOUT = 0 to VDD
-1uA
1uA
Output High Voltage
VOH
IOH = - 4mA
2.4
Output Low Voltage
VOL
ILO = + 4mA
0.4V


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