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KTX411T 데이터시트(Datasheet) 2 Page - KEC(Korea Electronics)

부품명 KTX411T
상세내용  EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
PDF  4 Pages
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제조사  KEC [KEC(Korea Electronics)]
홈페이지  http://www.keccorp.com
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 2 page
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2002. 8. 13
2/4
KTX411T
Revision No : 2
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Collector Cut-off Current
ICBO
VCB=20V, IE=0
-
-
0.1
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
-
-
0.1
DC Current Gain
hFE(1) (Note)
VCE=2V, IC=50
120
-
400
hFE(2)
VCE=2V, IC=1A (Pulse)
30
-
-
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=500 , IB=50
-
0.1
0.3
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=500 , IB=50
-
0.85
1.2
V
Transition Frequency
fT
VCE=10V, IC=50
-
180
-
Collector Output Capacitance
Cob
VCB=10V, IE=0, f=1
-
15
-
Note) hFE Classification
Y:120~240,
GR:200~400.
ELECTRICAL CHARACTERISTICS (Ta=25
)
DIODE D1
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Forward Voltage
VF
IF=1.0A
-
0.4
0.45
V
Reverse Current
IR
VR=20V
-
-
200
TRANSISTOR Q1




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