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2SC3935 데이터시트(PDF) 1 Page - Panasonic Semiconductor

부품명 2SC3935
상세설명  Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)
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제조업체  PANASONIC [Panasonic Semiconductor]
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2SC3935 데이터시트(HTML) 1 Page - Panasonic Semiconductor

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1
Transistor
2SC3935
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
s Features
q
High transition frequency fT.
q
Small collector output capacitance Cob and common base reverse
transfer capacitance Crb.
q
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
EIAJ:SC–70
3:Collector
S–Mini Type Package
2.1
±0.1
1.25
±0.1
0.425
0.425
1
3
2
0.2
±0.1
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
15
10
3
50
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Common emitter reverse transfer capacitance
Base time constant
hFE ratio
Symbol
ICBO
ICEO
VCEO
VEBO
hFE1
hFE2
VCE(sat)
fT
Cob
Crb
rbb' · CC
hFE(RATIO)
Conditions
VCB = 10V, IE = 0
VCE = 10V, IB = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 2.4V, IC = 7.2mA
VCE = 2.4V, IC = 100µA
IC = 20mA, IB = 4mA
VCE = 2.4V, IC = 7.2mA, f = 200MHz
VCB = 4V, IE = 0, f = 1MHz
VCB = 4V, IE = 0, f = 1MHz
VCB = 4V, IE = –5mA, f = 31.9MHz
VCE = 2.4V, IC = 100µA
VCE = 2.4V, IC = 7.2mA
min
10
3
75
75
1.4
0.75
typ
1.9
0.9
0.25
11.8
max
1
10
220
0.5
2.5
1.1
0.35
13.5
1.6
Unit
µA
µA
V
V
V
GHz
pF
pF
ps
*1h
FE Rank classification
Rank
P
Q
hFE
75 ~ 130
110 ~ 220
Marking symbol :
1S


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