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BAT854SW 데이터시트(PDF) 4 Page - NXP Semiconductors |
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4 / 8 page 2001 Feb 27 4 Philips Semiconductors Product specification Schottky barrier (double) diodes BAT854W series GRAPHICAL DATA handbook, halfpage 1.2 0.8 0.4 0 (1) (3) VF (V) IF (mA) 103 102 10 1 10−1 MLD546 (2) Fig.6 Forward current as a function of forward voltage; typical values. (1) Tamb = 125 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. handbook, halfpage 40 20 10 0 VR (V) IR ( µA) 30 103 102 10 1 10−1 MLD547 (1) (2) (3) Fig.7 Reverse current as a function of reverse voltage; typical values. (1) Tamb = 125 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. handbook, halfpage 0 VR (V) Cd (pF) 10 20 40 20 0 16 30 12 8 4 MLD548 Fig.8 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tamb =25 °C. |
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