SI5449DC datasheet(2/4 Pages) VISHAY

부품명	SI5449DC

상세설명	P-Channel 30-V (D-S) MOSFET

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Si5449DC

Vishay Siliconix

www.vishay.com

2

Document Number: 71327

S-21251—Rev. B, 05-Aug-02

SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS =VGS,ID = --250 mA

--0.6

V

Gate-Body Leakage

IGSS

VDS =0 V, VGS = 12 V

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS =--24 V, VGS =0 V

--1

mA

Zero Gate Voltage Drain Current

IDSS

VDS =--24 V, VGS =0 V, TJ =85_C

--5

mA

On-State Drain Currenta

ID(on)

VDS ≤ --5 V, VGS =--4.5 V

--15

A

Drain Source On State Resistancea

rDS( )

VGS =--4.5 V, ID =--3.1 A

0.071

0.085

Ω

Drain-Source On-State Resistancea

rDS(on)

VGS =--2.5 V, ID =--1 A

0.112

0.135

Ω

Forward Transconductancea

gfs

VDS =--10 V, ID =--3.1 A

8.5

S

Diode Forward Voltagea

VSD

IS =--1.1 A, VGS =0 V

--0.8

--1.2

V

Dynamicb

Total Gate Charge

Qg

7.2

11

Gate-Source Charge

Qgs

VDS =--15 V, VGS =--4.5 V, ID =--3.1 A

2.2

nC

Gate-Drain Charge

Qgd

1.7

Turn-On Delay Time

td(on)

13

25

Rise Time

tr

VDD =--15 V,RL =15 Ω

14

30

ms

Turn-Off Delay Time

td(off)

VDD = --15 V, RL = 15 Ω

ID ≅ --1 A, VGEN =--4.5 V, RG =6 Ω

35

70

ms

Fall Time

tf

20

40

Source-Drain Reverse Recovery Time

trr

IF = --1.1 A, di/dt = 100 A/ms

40

60

ns

Notes

a.

Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

3

6

9

12

15

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0

3

6

9

12

15

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS =5 thru 3.5 V

TC =--55_C

3V

25_C

Output Characteristics

Transfer Characteristics

VDS -- Drain-to-Source Voltage (V)

VGS -- Gate-to-Source Voltage (V)

1.5 V

2V

2.5 V

125_C

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SI5449DC 데이터시트(PDF) 2 Page - Vishay Siliconix

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