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MC10EP58DT 데이터시트(PDF) 4 Page - ON Semiconductor

부품명 MC10EP58DT
상세설명  3.3V / 5V ECL 2:1 Multiplexer
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC10EP58DT 데이터시트(HTML) 4 Page - ON Semiconductor

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MC10EP58, MC100EP58
http://onsemi.com
4
100EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 9.)
–40
°C
25
°C
85
°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
20
28
37
20
31
39
25
33
42
mA
VOH
Output HIGH Voltage (Note 10.)
2155
2280
2405
2155
2280
2405
2155
2280
2405
mV
VOL
Output LOW Voltage (Note 10.)
1355
1480
1605
1355
1480
1605
1355
1480
1605
mV
VIH
Input HIGH Voltage (Single Ended)
2075
2420
2075
2420
2075
2420
mV
VIL
Input LOW Voltage (Single Ended)
1355
1675
1355
1675
1355
1675
mV
IIH
Input HIGH Current
150
150
150
µA
IIL
Input LOW Current
0.5
0.5
0.5
µA
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
9. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to –2.2 V.
10. All loading with 50 ohms to VCC–2.0 volts.
100EP DC CHARACTERISTICS, PECL VCC = 5.0 V, VEE = 0 V (Note 11.)
–40
°C
25
°C
85
°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
20
28
37
20
31
39
25
33
42
mA
VOH
Output HIGH Voltage (Note 12.)
3855
3980
4105
3855
3980
4105
3855
3980
4105
mV
VOL
Output LOW Voltage (Note 12.)
3055
3180
3305
3055
3180
3305
3055
3180
3305
mV
VIH
Input HIGH Voltage (Single Ended)
3775
4120
3775
4120
3775
4120
mV
VIL
Input LOW Voltage (Single Ended)
3055
3375
3055
3375
3055
3375
mV
IIH
Input HIGH Current
150
150
150
µA
IIL
Input LOW Current
0.5
0.5
0.5
µA
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
11. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to –0.5 V.
12. All loading with 50 ohms to VCC–2.0 volts.
100EP DC CHARACTERISTICS, NECL VCC = 0 V, VEE = –5.5 V to –3.0 V (Note 13.)
–40
°C
25
°C
85
°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
20
28
37
20
31
39
25
33
42
mA
VOH
Output HIGH Voltage (Note 14.)
–1145
–1020
–895
–1145
–1020
–895
–1145
–1020
–895
mV
VOL
Output LOW Voltage (Note 14.)
–1945
–1820
–1695
–1945
–1820
–1695
–1945
–1820
–1695
mV
VIH
Input HIGH Voltage (Single Ended)
–1225
–880
–1225
–880
–1225
–880
mV
VIL
Input LOW Voltage (Single Ended)
–1945
–1625
–1945
–1625
–1945
–1625
mV
IIH
Input HIGH Current
150
150
150
µA
IIL
Input LOW Current
0.5
0.5
0.5
µA
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
13. Input and output parameters vary 1:1 with VCC.
14. All loading with 50 ohms to VCC–2.0 volts.


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