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MC10EP58DT 데이터시트(PDF) 4 Page - ON Semiconductor |
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MC10EP58DT 데이터시트(HTML) 4 Page - ON Semiconductor |
4 / 8 page MC10EP58, MC100EP58 http://onsemi.com 4 100EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 9.) –40 °C 25 °C 85 °C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current 20 28 37 20 31 39 25 33 42 mA VOH Output HIGH Voltage (Note 10.) 2155 2280 2405 2155 2280 2405 2155 2280 2405 mV VOL Output LOW Voltage (Note 10.) 1355 1480 1605 1355 1480 1605 1355 1480 1605 mV VIH Input HIGH Voltage (Single Ended) 2075 2420 2075 2420 2075 2420 mV VIL Input LOW Voltage (Single Ended) 1355 1675 1355 1675 1355 1675 mV IIH Input HIGH Current 150 150 150 µA IIL Input LOW Current 0.5 0.5 0.5 µA NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained. 9. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to –2.2 V. 10. All loading with 50 ohms to VCC–2.0 volts. 100EP DC CHARACTERISTICS, PECL VCC = 5.0 V, VEE = 0 V (Note 11.) –40 °C 25 °C 85 °C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current 20 28 37 20 31 39 25 33 42 mA VOH Output HIGH Voltage (Note 12.) 3855 3980 4105 3855 3980 4105 3855 3980 4105 mV VOL Output LOW Voltage (Note 12.) 3055 3180 3305 3055 3180 3305 3055 3180 3305 mV VIH Input HIGH Voltage (Single Ended) 3775 4120 3775 4120 3775 4120 mV VIL Input LOW Voltage (Single Ended) 3055 3375 3055 3375 3055 3375 mV IIH Input HIGH Current 150 150 150 µA IIL Input LOW Current 0.5 0.5 0.5 µA NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained. 11. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to –0.5 V. 12. All loading with 50 ohms to VCC–2.0 volts. 100EP DC CHARACTERISTICS, NECL VCC = 0 V, VEE = –5.5 V to –3.0 V (Note 13.) –40 °C 25 °C 85 °C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current 20 28 37 20 31 39 25 33 42 mA VOH Output HIGH Voltage (Note 14.) –1145 –1020 –895 –1145 –1020 –895 –1145 –1020 –895 mV VOL Output LOW Voltage (Note 14.) –1945 –1820 –1695 –1945 –1820 –1695 –1945 –1820 –1695 mV VIH Input HIGH Voltage (Single Ended) –1225 –880 –1225 –880 –1225 –880 mV VIL Input LOW Voltage (Single Ended) –1945 –1625 –1945 –1625 –1945 –1625 mV IIH Input HIGH Current 150 150 150 µA IIL Input LOW Current 0.5 0.5 0.5 µA NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained. 13. Input and output parameters vary 1:1 with VCC. 14. All loading with 50 ohms to VCC–2.0 volts. |
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