전자부품 데이터시트 검색엔진 |
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KM68V257E 데이터시트(PDF) 3 Page - Samsung semiconductor |
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KM68V257E 데이터시트(HTML) 3 Page - Samsung semiconductor |
3 / 8 page KM68V257E/EL, KM68V257EI/ELI CMOS SRAM Revision 0.0 - 3 - August 1998 RECOMMENDED DC OPERATING CONDITIONS(TA=0 to 70 °C) NOTE: The above parameters are also guaranteed at industrial temperature range. * VIL(Min) = -2.0(Pulse Width ≤ 8ns) for I ≤ 20mA ** VIH(Max) = VCC+2.0V(Pulse Width ≤ 8ns) for I ≤ 20mA Parameter Symbol Min Typ Max Unit Supply Voltage VCC 3.0 3.3 3.6 V Ground VSS 0 0 0 V Input High Voltage VIH 2.0 - VCC+0.3** V Input Low Voltage VIL -0.3* - 0.8 V DC AND OPERATING CHARACTERISTICS(TA=0 to 70 °C,VCC=3.3±0.3V, unless otherwise specified) NOTE: The above parameters are also guaranteed at industrial temperature range. Parameter Symbol Test Conditions Min Max Unit Input Leakage Current ILI VIN = VSS to VCC -2 2 µA Output Leakage Current ILO CS=VIH or OE=VIH or WE=VIL VOUT = VSS to VCC -2 2 µA Operating Current ICC Min. Cycle, 100% Duty CS=VIL, VIN = VIH or VIL, IOUT=0mA 12ns - 70 mA 15ns - 70 20ns 70 Standby Current ISB Min. Cycle, CS=VIH - 20 mA ISB1 f=0MHz, CS ≥VCC-0.2V, VIN ≥VCC-0.2V or VIN≤0.2V Normal - 2 mA L-ver - 0.5 Output Low Voltage Level VOL IOL=8mA - 0.4 V Output High Voltage Level VOH IOH=-4mA 2.4 - V CAPACITANCE*(TA=25 °C, f=1.0MHz) * NOTE : Capacitance is sampled and not 100% tested. Item Symbol Test Conditions MIN Max Unit Input/Output Capacitance CI/O VI/O=0V - 8 pF Input Capacitance CIN VIN=0V - 7 pF ABSOLUTE MAXIMUM RATINGS* * Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Parameter Symbol Rating Unit Voltage on Any Pin Relative to VSS VIN, VOUT -0.5 to 4.6 V Voltage on VCC Supply Relative to VSS VCC -0.5 to 4.6 V Power Dissipation PD 1.0 W Storage Temperature TSTG -65 to 150 °C Operating Temperature Commercial TA 0 to 70 °C Industrial TA -40 to 85 °C |
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