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2SD1772 데이터시트(PDF) 2 Page - Panasonic Semiconductor |
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2SD1772 데이터시트(HTML) 2 Page - Panasonic Semiconductor |
2 / 2 page 2 Power Transistors 2SD1772, 2SD1772A PC —Ta IC —VCE IC —VBE VCE(sat) —IC hFE —IC fT —IC Area of safe operation (ASO) Rth(t) —t 0 160 40 120 80 140 20 100 60 0 40 30 10 25 35 20 5 15 (1) T C=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (P C=2W) (1) (3) (2) Ambient temperature Ta (˚C) 024 20 16 412 8 0 1.6 1.2 0.4 1.0 1.4 0.8 0.2 0.6 I B=20mA T C=25˚C 10mA 8mA 6mA 4mA 2mA 1mA Collector to emitter voltage V CE (V) 01.6 0.4 1.2 0.8 0 4 3 1 2 T C=100˚C 25˚C –25˚C V CE=10V Base to emitter voltage V BE (V) 0.01 3 1 0.1 0.03 0.3 0.01 0.03 0.1 0.3 1 3 10 I C/IB=10 T C=100˚C 25˚C –25˚C Collector current I C (A) 0.01 3 1 0.1 0.03 0.3 1 3 10 30 100 300 1000 V CE=10V T C=100˚C 25˚C –25˚C Collector current I C (A) 0.01 0.1 1 10 0.03 0.3 3 0.1 0.3 1 3 10 30 100 300 1000 V CE=10V f=1MHz T C=25˚C Collector current I C (A) 1 10 100 1000 3 30 300 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 Non repetitive pulse T C=25˚C I CP I C 1ms 10ms DC t=0.5ms Collector to emitter voltage V CE (V) 10–4 10 10–3 10–1 10–2 1103 102 104 10–2 10–1 1 10 102 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) (2) Time t (s) |
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