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2SD1894 데이터시트(Datasheet) 1 Page - Panasonic Semiconductor

부품명 2SD1894
상세내용  Silicon NPN triple diffusion planar type Darlington(For power amplification)
PDF  3 Pages
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제조사  PANASONIC [Panasonic Semiconductor]
홈페이지  http://www.panasonic.com/industrial/
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1
Power Transistors
2SD1894
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1254
s Features
q
Optimum for 60W HiFi output
q
High foward current transfer ratio hFE: 5000 to 30000
q
Low collector to emitter saturation voltage VCE(sat): <2.5V
q
Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (T
C=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
160
140
5
12
7
70
3
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (T
C=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2
*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = 160V, IE = 0
VCE = 140V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 6A
IC = 6A, IB = 6mA
IC = 6A, IB = 6mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 6A, IB1 = 6mA, IB2 = –6mA,
VCC = 50V
min
140
2000
5000
typ
20
2.5
5.0
2.5
max
100
100
100
30000
2.5
3.0
Unit
µA
µA
µA
V
V
V
MHz
µs
µs
µs
*h
FE2 Rank classification
Rank
Q
P
hFE2
5000 to 15000 8000 to 30000
TC=25°C
Ta=25
°C
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
15.0
±0.3
5.0
±0.2
11.0
±0.2
10.9
±0.5
5.45
±0.3
3
2
1
1.1
±0.1
2.0
±0.2
0.6
±0.2
2.0
±0.1
φ3.2±0.1
3.2
B
E
C




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