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SSY39V800904EEK 데이터시트(Datasheet) 7 Page - Silicon Storage Technology, Inc

부품명 SSY39V800904EEK
상세내용  2 MBIT / 4 MBIT / 8 MBIT ( X 16 ) MULTI - PURPOSE FLASH
PDF  20 Pages
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제조사  SST [Silicon Storage Technology, Inc]
홈페이지  http://www.sst.com/
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 7 page
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Data Sheet
2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash
SST39LF200A / SST39LF400A / SST39LF800A
SST39VF200A / SST39VF400A / SST39VF800A
7
©2001 Silicon Storage Technology, Inc.
S71117-04-000
6/01
360
TABLE
2: PIN DESCRIPTION
Symbol
Pin Name
Functions
AMS1-A0
Address Inputs
To provide memory addresses. During Sector-Erase AMS-A11 address lines will select the
sector. During Block-Erase AMS-A15 address lines will select the block.
DQ15-DQ0
Data Input/output
To output data during Read cycles and receive input data during Write cycles.
Data is internally latched during a Write cycle.
The outputs are in tri-state when OE# or CE# is high.
CE#
Chip Enable
To activate the device when CE# is low.
OE#
Output Enable
To gate the data output buffers.
WE#
Write Enable
To control the Write operations.
VDD
Power Supply
To provide power supply voltage:
3.0-3.6V for SST39LF200A/400A/800A
2.7-3.6V for SST39VF200A/400A/800A
VSS
Ground
NC
No Connection
Unconnected pins.
T2.2 360
1. AMS = Most significant address
AMS = A16 for SST39LF/VF200A, A17 for SST39LF/VF400A, and A18 for SST39LF/VF800A
TABLE
3: OPERATION MODES SELECTION
Mode
CE#
OE#
WE#
DQ
Address
Read
VIL
VIL
VIH
DOUT
AIN
Program
VIL
VIH
VIL
DIN
AIN
Erase
VIL
VIH
VIL
X1
1. X can be VIL or VIH, but no other value.
Sector or Block address,
XXH for Chip-Erase
Standby
VIH
XX
High Z
X
Write Inhibit
X
VIL
XHigh Z/ DOUT
X
XX
VIH
High Z/ DOUT
X
Product Identification
Software Mode
VIL
VIL
VIH
See Table 4
T3.4 360




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