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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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2SK2573 데이터시트(PDF) 1 Page - Panasonic Semiconductor |
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2SK2573 데이터시트(HTML) 1 Page - Panasonic Semiconductor |
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1 / 3 page  1 Power F-MOS FETs unit: mm 2SK2573 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 1: Gate 2: Drain 3: Source TOP-3E Package s Electrical Characteristics (T C = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Ciss Coss Crss ton tf td(off) Rth(ch-c) Rth(ch-a) Conditions VDS = 400V, VGS = 0 VGS = ±20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 10A VDS = 25V, ID = 10A IDR = 20A, VGS = 0 VDS = 20V, VGS = 0, f = 1MHz VDD = 150V, ID = 10A VGS = 10V, RL = 15Ω min 500 1 7.2 typ 0.32 12 3000 430 175 150 140 480 max 100 ±1 5 0.4 −2.8 1.25 41.67 Unit µA µA V V Ω S V pF pF pF ns ns ns °C/W °C/W s Absolute Maximum Ratings (T C = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature DC Pulse TC = 25°C Ta = 25°C Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 500 ±30 ±20 ±40 20 100 3 150 −55 to +150 Unit V V A A mJ W °C °C * L = 0.1mH, IL = 20A, 1 pulse 15.5±0.5 3.0±0.3 φ3.2±0.1 5.45±0.3 123 5.45±0.3 1.1±0.1 2.0±0.2 4.0 5˚ 5˚ 5˚ 5˚ 5˚ 5˚ 0.7±0.1 |
유사한 부품 번호 - 2SK2573 |
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유사한 설명 - 2SK2573 |
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